2SD1691L-Y-T60-K [UTC]

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3;
2SD1691L-Y-T60-K
型号: 2SD1691L-Y-T60-K
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3

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UNISONIC TECHNOLOGIES CO., LTD  
2SD1691  
NPN SILICON TRANSISTOR  
LOW COLLECTOR  
SATURATION VOLTAGE  
LARGE CURRENT  
1
1
TO-220F1  
TO-220  
TO-126  
FEATURES  
*High Power Dissipation  
*Complementary to 2SB1151  
1
1
TO-126C  
TO - 252  
1
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free Plating  
2SD1691L-x-TA3-T  
2SD1691L-x-TF1-T  
2SD1691L-x-TN3-T  
2SD1691L-x-T60-K  
2SD1691L-x-T6C-K  
Halogen Free  
1
2
3
2SD1691G-x-TA3-T  
2SD1691G-x-TF1-T  
2SD1691G-x-TN3-T  
2SD1691G-x-T60-K  
2SD1691G-x-T6C-K  
TO-220  
TO-220F1  
TO-252  
B
B
B
E
E
C
C
C
C
C
E
E
E
B
B
Tube  
Tube  
Tape Reel  
Bulk  
TO-126  
TO-126C  
Bulk  
MARKING INFORMATION  
PACKAGE  
MARKING  
TO-220  
TO-220F1  
TO-252  
TO-126  
TO-126C  
www.unisonic.com.tw  
1 of 4  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R204-015.D  
2SD1691  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
Collector-Base Voltage  
60  
V
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
7
DC  
5
Collector Current  
A
A
Pulse (PW10ms,Duty Cycle50%)  
ICP  
8
Base Current  
IB  
1
TO-220F1  
TO-220  
23  
54  
Collector Power Dissipation (Tc=25°C)  
PC  
W
TO-252  
36  
TO-126/ TO-126C  
20  
Junction Temperature  
TJ  
150  
°C  
°C  
Storage Temperature Range  
TSTG  
-55 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified )  
CHARACTERISTIC  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=50V,IE=0  
MIN TYP MAX UNIT  
Collector Cut-off Current  
Emitter Cut-off Current  
10  
10  
μA  
μA  
IEBO  
VEB=7V, IC=0  
hFE1  
VCE=1V, IC =0.1A  
VCE=1V, IC =2A  
VCE=2V, IC =5A  
60  
160  
50  
DC Current Gain  
hFE2  
400  
hFE3  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE(SAT) (Note) IC=2A, IB=0.2A  
0.1  
0.9  
0.3  
1.2  
V
V
VBE(SAT) (Note) IC=2A, IB=0.2A  
20μsec  
OUTPUT  
IB1  
IB2  
Turn On Time  
TON  
0.2  
1.1  
0.2  
1
2.5  
1
INPUT  
IB1  
5Ω  
Switching Time  
μs  
Storage Time  
Fall Time  
TSTG  
Ω
IB2  
IB1=-IB2=0.2A  
DUTY CYCLE1%  
Vcc=10V  
TF  
Note: Pulse test: PW50μS, Duty Cycle2% Pulse  
CLASSIFICATION OF hFE2  
RANK  
O
Y
RANGE  
160-320  
200-400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R204-015.D  
www.unisonic.com.tw  
2SD1691  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R204-015.D  
www.unisonic.com.tw  
2SD1691  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R204-015.D  
www.unisonic.com.tw  

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