2SD1803-X-TN3-T [UTC]
HIGH CURRENT SWITCHING APPLICATION; 大电流开关应用
| 型号： | 2SD1803-X-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH CURRENT SWITCHING APPLICATION |
| 文件： | 总5页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1803
NPN SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SD1803 applies to relay drivers, high-speed
inverters, converters, and other general high-current switching
applications.
FEATURES
*Low Collector-To-Emitter Saturation Voltage.
*High Current And High fT.
*Excellent Linearity Of hFE.
*Fast Switching Time.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
2SD1803-x-TM3-T 2SD1803L-x-TM3-T 2SD1803G-x-TM3-T TO-251
2SD1803-x-TN3-R 2SD1803L-x-TN3-R 2SD1803G-x-TN3-R TO-252
2SD1803-x-TN3-T 2SD1803L-x-TN3-T 2SD1803G-x-TN3-T TO-252
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-014,E
2SD1803
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
60
50
6
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
DC
5
Collector Current
Power Dissipation
A
PULSE
TA=25°C
TC=25°C
ICM
8
1
PD
W
20
+150
°C
°C
Junction Temperature
Storage Temperature
TJ
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=10μA, IE=0
IC=1mA, RBE=∞
IE=10μA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
MIN
60
50
6
TYP MAX UNIT
V
V
V
1
1
μA
μA
Emitter Cutoff Current
IEBO
hFE1
VCE=2V, IC=0.5A
VCE=2V, IC=4A
70
35
400
DC Current Gain
hFE2
C-E Saturation Voltage
B-E Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
VCE(SAT) IC=3A, IB=0.15A
VBE(SAT) IC=3A, IB=0.15A
220
0.95
180
40
400
1.3
mV
V
fT
Cob
tON
tS
VCE=5V, Ic=1A
VCB=10V, f=1MHz
See Test Circuit
See Test Circuit
See Test Circuit
MHz
pF
ns
50
Storage Time
500
20
ns
Fall Time
tF
ns
CLASSIFICATION OF hFE1
RANK
Q
R
S
T
RANGE
70 ~ 140
100 ~ 200
140 ~ 280
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-014,E
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2SD1803
NPN SILICON TRANSISTOR
TEST CIRCUIT
IB1
RB
INPUT
OUTPUT
IB2
RL
VR
50
+
+
100μ
470μ
25V
-5V
PW=20μS
Duty Cycle≦1%
Ic=10IB1=-10IB2=2A
(Unit : (resistance : Ω, capacitance : F))
UNISONIC TECHNOLOGIES CO., LTD
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2SD1803
NPN SILICON TRANSISTOR
■ TYPICAL CHARACTERISTICS
Ic -VCE
Ic -VCE
5
5
25mA
30mA
35mA
40mA
45mA
4
3
4
3
25mA
20mA
20mA
15mA
15mA
10mA
2
2
1
10mA
5mA
IB=0
5mA
1
IB=0
0
0
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
Ic -VBE
Collector to Emitter Voltage, VCE (V)
C
hFE -I c
1000
6
VCE=2V
VCE=2V
7
5
5
4
3
Ta=75 C
3
2
100
Ta=25 C
Ta=-25 C
Ta=75 C
Ta=25 C
7
5
2
1
0
3
2
Ta=-25
1.0
C
10
2
3
5 7
0.1
0
0.2
2
3
5 7
1.0
2 3 5 7
10
0.4
0.8
0.6
1.2
5 7 0.01
Base to Emitter Voltage, VBE (V)
fT -I c
Collector Current, IC (A)
Cob -VcB
5
1000
7
VCE=5V
f=1MHz
3
2
3
2
100
7
5
100
7
5
3
2
3
2
10
10
5
7
5 7
2
3
2 3
2
3
5
7
5
7
2
3
5
7
5 7
100
2
3
10
1.0
1.0
10
0.1
Colletcor Current, Ic (A)
Colletcor to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
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2SD1803
NPN SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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