2SD1803Q(TO-252) [UTC]

Transistor;
2SD1803Q(TO-252)
型号: 2SD1803Q(TO-252)
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

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中文:  中文翻译
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UTC2SD1803 NPN EPITAXIAL PLANAR SILICON TRANSISTOR  
HIGH CURRENT SWITCHIG  
APPLICATION  
APPLICATIONS  
The UTC 2SD1803 applies to relay drivers, high-speed  
inverters, converters ,and other general high-current  
switching applications.  
1
FEATURES  
*Low collector-to-emitter saturation voltage.  
*High current and high fT.  
*Excellent linerarity of hFE.  
*Fast switching time.  
TO-252  
1: BASE 2: COLLECTOR 3: EMITTER  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
VALUE  
UNIT  
V
V
V
A
Collector-Base Voltage  
60  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
50  
6
5
Collector Current(PULSE)  
Collector Dissipation  
Collector Dissipation(Tc=25°C)  
Junction Temperature  
Storage Temperature  
Icp  
Pc  
Pc  
Tj  
8
1
20  
A
W
W
°C  
°C  
150  
-55 ~ +150  
Tstg  
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
TEST CONDITIONS  
IC=10µA,IE=0  
MIN TYP MAX UNIT  
60  
50  
6
V
V
V
µA  
µA  
IC=1mA,RBE=∞  
IE=10µA,Ic=0  
VCB=40V,IE=0  
VEB=4V,IC=0  
1
1
Emitter Cutoff Current  
IEBO  
DC Current Gain  
hFE1  
hFE2  
fT  
Cob  
VCE=2V, Ic=0.5A  
VCE=2V, Ic=4A  
VCE=5V,Ic=1A  
VCB=10V,f=1MHz  
70*  
35  
400*  
Gain-Bandwidth Product  
Output Capacitance  
180  
40  
MHz  
pF  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R209-014,A  
UTC2SD1803 NPN EPITAXIAL PLANAR SILICON TRANSISTOR  
PARAMETER  
C-E Saturation Voltage  
B-E Saturation Voltage  
Turn-on Time  
Storage Time  
Fall Time  
SYMBOL  
VCE(sat)  
VBE(sat)  
ton  
TEST CONDITIONS  
IC=3A,IB=0.15A  
IC=3A,IB=0.15A  
See test circuit  
MIN TYP MAX UNIT  
220  
0.95  
50  
400  
1.3  
mV  
V
ns  
ns  
ns  
tstg  
tf  
See test circuit  
See test circuit  
500  
20  
CLASSIFICATION OF hFE1  
RANK  
Q
R
S
T
RANGE  
70-140  
100-200  
140-280  
200-400  
SWITCHING TIME TEST CIRCUIT (Unit : (resistance : , capacitance : F))  
PW=20μS  
IB1  
Duty Cycle1%  
INPUT  
RB  
OUTPUT  
IB2  
RL  
VR  
50  
+
+
100μ  
470μ  
25V  
-5V  
Ic=10IB1=-10IB2=2A  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R209-014,A  
UTC2SD1803 NPN EPITAXIAL PLANAR SILICON TRANSISTOR  
Ic -VCE  
Ic -VCE  
5
5
25mA  
30mA  
35mA  
4
3
4
3
25mA  
20mA  
40mA  
45mA  
20mA  
15mA  
15mA  
10mA  
10mA  
5mA  
2
2
1
5mA  
1
IB=0  
IB=0  
0
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
2
4
6
8
10  
Collector to Emitter Voltage,VCE - V  
Ic -VBE  
Collector to Emitter Voltage,VCE - V  
hFE -I c  
1000  
6
VCE=2V  
VCE=2V  
7
5
3
2
5
4
3
Ta=75  
100  
7
5
3
2
Ta=25℃  
Ta=-25℃  
Ta=75℃  
Ta=25℃  
2
1
0
Ta=-25℃  
10  
5 7 0.01  
2
3
5 7  
0.1  
0
0.2  
2
3
5
7
2 3 5 7  
10  
0.4  
0.8  
1.0  
0.6  
1.2  
1.0  
Base to Emitter Voltage,VBE - V  
fT -I c  
Collector Current, IC- A  
Cob -VcB  
5
1000  
7
VCE=5V  
f=1MHz  
3
2
3
2
100  
7
5
100  
7
5
3
2
3
2
10  
10  
5
7
5 7  
2
3
2 3  
2
3
5
7
5
7
1.0  
2
3
5
7
5 7  
100  
2
3
10  
1.0  
10  
0.1  
Colletcor Current,Ic -A  
Colletcor to Base Voltage,VCB-V  
3
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R209-014,A  
UTC2SD1803 NPN EPITAXIAL PLANAR SILICON TRANSISTOR  
VCE(sat) -Ic  
VBE(sat) -Ic  
5
3
2
10  
7
Ic/IB=20  
Ic/IB=20  
5
1000  
7
5
3
2
3
2
Ta=75  
Ta=-25℃  
100  
7
Ta=-25℃  
1.0  
7
5
3
2
Ta=25℃  
5
3
Ta=25℃  
Ta=75℃  
10  
2
2
3 5  
2
3 5 7  
2
3
5 7  
1.0  
2 3 5  
7
7
5 7  
3
5 7  
5 7  
5
2 3  
7
1.0  
0.01  
10  
0.01  
10  
0.1  
0.1  
Collector Current, IC- A  
A S O  
Collector Current, IC- A  
Pc -Ta  
2
24  
20  
16  
12  
Icp  
10ms  
10  
1ms  
7
Ic  
5
3
100ms  
2
1.0  
7
5
3
2
8
4
0.1  
7
5
3
2
No heat sink  
20 40 60  
Ambient Temperature, Ta -℃  
Tc=25℃  
1
0
0.01  
2
2
3
5
7
5
7
0
140 160  
0.1  
3
5 7  
2
3
80 100 120  
100  
10  
1.0  
Colletcor to Emitter Voltage,VCE-V  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
4
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R209-014,A  

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