2SD1804R(TO-252) [UTC]
Transistor;
| 型号： | 2SD1804R(TO-252) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATIONS
APPLICATIONS
The UTC 2SD1804 applies to relay drivers, high-speed
inverters, converters, and other general high-current
switching applications.
1
FEATURES
*Low collector-to-emitter saturation voltage
*High current and high fT
*Excellent linerarity of hFE.
*Fast switching time
*Small and slim package making it easy to make 2SD1804
applied sets smaller.
TO-252
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
60
50
6
1
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
V
W
W
A
A
°C
°C
Tc=25°C
Ic
Icp
Tj
Tstg
20
8
12
Collector Current
Collector Current(PULSE)
Junction Temperature
Storage Temperature
150
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITIONS
VCB=40V,IE=0
VEB=4V,IC=0
MIN TYP MAX UNIT
1
1
400
µA
µA
IEBO
hFE1
hFE2
fT
VCE=2V, Ic=0.5A
VCE=2V, Ic=6A
VCE=5V,Ic=1A
70
35
Gain-Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
180
65
200
0.95
MHz
pF
mV
V
Cob
VCE(sat)
VBE(sat)
VCE=10V,f=1MHz
IC=4A,IB=0.2A
IC=4A,IB=0.2A
400
1.3
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R209-006,A
UTC2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Storage Time
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
tstg
TEST CONDITIONS
IC=10µA,IE=0
MIN TYP MAX UNIT
60
50
6
V
V
V
ns
ns
IC=1mA,RBE=∞
IE=10µA,Ic=0
See test circuit
See test circuit
500
20
Fall Time
tf
CLASSIFICATION OF hFE1
RANK
Q
R
S
T
RANGE
70-140
100-200
140-280
200-400
SWITCHING TIME TEST CIRCUIT
PW=20uS
IB1
RB
Duty Cycle≒1%
INPUT
OUTPUT
IB2
RL
VR
50
+
+
100u
470u
25V
-5V
Ic=10 IB1= -10 IB2=4A
Unit(resistance:Ω,capacitance:F)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R209-006,A
UTC2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Ic -VCE
Ic -VCE
10
5
60mA
70mA
25mA
80mA
8
6
4
3
90mA
20mA
15mA
100mA
40mA
10mA
30mA
20mA
4
2
1
2
0
10mA
5mA
IB=0
IB=0
1.6
0
0
0.4
0.8
1.2
2.0
0
2
4
6
8
10
Collector to Emitter Voltage,VCE - V
Ic -VBE
Collector to Emitter Voltage,VCE - V
hFE -I c
1000
9
VCE=2V
VCE=2V
7
5
Ta=75° C
8
7
3
2
6
5
100
4
3
2
7
5
3
2
Ta=75° C
Ta=25° C
Ta=25° C
Ta=-25° C
Ta=-25° C
1
0
10
0.01
2
2
3
5 7
0
0.2
0.4
0.8
1.0
2 3 5 7
2 3 5 7
10
1.0
0.6
1.2
0.1
Base to Emitter Voltage,VBE - V
fT -I c
Collector Current, IC- A
Cob -VcB
5
5
VCE=5V
f=1MHz
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
5
7
5 7
2
3
2 3
2
3
5
7
5
7
2
3
5
7
5 7
100
2
3
10
1.0
1.0
10
0.1
Colletcor Current,Ic -A
Colletcor to Base Voltage,VCB-V
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R209-006,A
UTC2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
VCE(sat) -Ic
VBE(sat) -Ic
1000
7
5
10
7
Ic/IB=20
Ic/IB=20
5
3
2
3
2
100
7
5
Ta=75℃
Ta=-25℃
Ta=-25℃
1.0
7
3
2
5
Ta=25℃
Ta=25℃
Ta=75℃
3
2
10
2
2
3
5
2
3 5 7
2
3
5 7
1.0
2 3 5
7
7
5 7
3
5 7
5 7
5
2 3
7
1.0
0.01
10
0.01
10
0.1
0.1
Collector Current, IC- A
A S O
Collector Current, IC- A
Pc -Ta
2
24
20
16
12
Icp
10ms
10
7
1ms
Ic
5
3
100ms
2
1.0
7
5
3
2
8
4
0.1
7
5
3
2
Tc=25℃,One Pulse For
PNP,minus sign is omitted.
No heat sink
20 40 60
Ambient Temperature, Ta -℃
1
0
0.01
2
2
3
5
7
5
7
0
140 160
0.1
3
5
7
2
3
80 100 120
100
10
1.0
Colletcor to Emitter Voltage,VCE-V
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R209-006,A
相关型号：
2SD1804RTL
TRANSISTOR 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal
ONSEMI
2SD1804STL
TRANSISTOR 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal
ONSEMI
2SD1804TTL
TRANSISTOR 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal
ONSEMI
©2020 ICPDF网 联系我们和版权申明