2SD1816G-X-TN3-R [UTC]
HIGH CURRENT SWITCHIG APPLICATION; HIGH CURRENT SWITCHIG应用
| 型号： | 2SD1816G-X-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH CURRENT SWITCHIG APPLICATION |
| 文件： | 总5页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1816
NPN PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATIONS
FEATURES
* Low collector-to-emitter saturation voltage
* Good linearity of hFE
* Small and slim package facilitating compactness of sets.
* High fT
* Fast switching speed
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
B
B
2
C
C
C
C
3
E
E
E
E
2SD1816L-x-TF3-T
2SD1816L-x-TM3-T
2SD1816L-x-TN3-T
2SD1816L-x-TN3-R
2SD1816G-x-TF3-T
2SD1816G-x-TM3-T
2SD1816G-x-TN3-T
2SD1816G-x-TN3-R
TO-220F
TO-251
TO-252
TO-252
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-011,C
2SD1816
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta =25℃)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
120
VCEO
100
V
VEBO
6
V
DC
4
A
Collector Current
IC
PULSE(Note 1)
TO-251/TO-252
TO-220F
8
A
1
2
W
W
°C
°C
Collector Power Dissipation
PD
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-40 ~ +150
Note1: Duty=1/2, Pw=20ms
Note2: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
VBE(SAT)
VCE(SAT)
ICBO
TEST CONDITIONS
IC =10μA, IE =0
MIN TYP MAX UNIT
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
120
100
6
V
V
IC =1mA, RB=∞
IE =10μA, IC=0
V
IC = 2A, IB =0.2A
IC = 2A, IB=0.2A
VCB = 100 V, IE =0
VEB = 4V, IC=0
0.9
1.2
V
150 400
mV
μA
μA
1
1
Emitter Cut-Off Current
IEBO
hFE1
VCE = 5V, IC = 0.5A
VCE =5V, IC = 3A
VCE =10V, IC =0.5A
VCB =10V, IE =0A, f =1MHz
See test circuit
70
40
400
DC Current Transfer Ratio
hFE2
Transition Frequency
Output Capacitance
Turn-on Time
fT
180
40
MHz
pF
ns
Cob
tON
100
900
50
Storage Time
tSTG
See test circuit
ns
Fall Time
tF
See test circuit
ns
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-011,C
www.unisonic.com.tw
2SD1816
NPN PLANAR TRANSISTOR
CLASSIFICATION of hFE1
RANK
R
S
T
Q
RANGE
100 - 200
140 - 280
200 - 400
70 -140
TEST CIRCUIT
PW=20μS
Duty Cycle≒1%
IB
1
INPUT
RB
OUTPUT
IB2
VR
50
+
100
+
µ
µ
470
-5V
50V
Ic=10, IB1= -10, IB2=2A
Unit (resistance:Ω, capacitance: F)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-011,C
www.unisonic.com.tw
2SD1816
NPN PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-011,C
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2SD1816
NPN PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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