2SD1857-X-T9N-R [UTC]

POWER TRANSISTOR; 功率晶体管
2SD1857-X-T9N-R
型号: 2SD1857-X-T9N-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

POWER TRANSISTOR
功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:35K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SD1857  
NPN SILICON TRANSISTOR  
POWER TRANSISTOR  
FEATURES  
* High breakdown voltage.(BVCEO=120V)  
* Low collector output capacitance.(Typ.20pF at VCB=10V)  
* High transition frequency.(fT=80MHz)  
1
TO-92  
1
TO-92NL  
*Pb-free plating product number: 2SD1857L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
E
E
E
E
E
2
3
B
B
B
B
B
2SD1857-x-T92-B  
2SD1857-x-T92-K  
2SD1857-x-T9N-B  
2SD1857-x-T9N-K  
2SD1857-x-T9N-R  
2SD1857L-x-T92-B  
2SD1857L-x-T92-K  
2SD1857L-x-T9N-B  
2SD1857L-x-T9N-K  
2SD1857L-x-T9N-R  
TO-92  
TO-92  
C
C
C
C
C
Tape Box  
Bulk  
TO-92NL  
TO-92NL  
TO-92NL  
Tape Box  
Bulk  
Tape Reel  
2SD1857L-x-T92-B  
(1)Packing Type  
(2)Package Type  
(1) B: Tape Box, K: Bulk, R: Tape Reel  
(2) T92: TO-92, T9N: TO-92NL  
(3)Rank  
(3) x: refer to Classification of h  
FE  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
12www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 2  
QW-R201-057,C  
2SD1857  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (Ta=25  
)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
PC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
120  
120  
5
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Power Dissipation  
Collector Current  
V
V
1
W
A
IC  
2
Collector Current  
ICP  
3
A
Junction Temperature  
Storage Temperature  
TJ  
+150  
TSTG  
-55 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta=25  
)  
PARAMETER SYMBOL TEST CONDITIONS  
Collector-Base Breakdown Voltage BVCBO IC=50µA  
Collector-Emitter Breakdown Voltage BVCEO IC=1mA  
MIN  
120  
120  
5
TYP  
MAX UNIT  
V
V
V
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
BVEBO IE=50µA  
ICBO  
IEBO  
hFE  
VCB=100V  
1
1
µA  
µA  
VEB=4V  
DC Current Transfer Ratio  
Collector-Emitter Saturation Voltage  
Transition Frequency  
VCE=5V, IC=0.1A  
82  
390  
0.4  
VCE(SAT) IC=/IB=1A/0.1A(Note)  
V
fT  
VCE=5V, IE= -0.1A, f=30MHz.  
80  
20  
MHz  
pF  
Output Capacitance  
Cob  
VCB=10V, IE=0A, f=1MHz(Note)  
:
Note Measured using pulse current.  
CLASSIFICATION OF hFE  
RANK  
P
Q
R
RANGE  
82-180  
120-270  
180-390  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 2  
QW-R201-057,C  
www.unisonic.com.tw  

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