2SD1898_12 [UTC]

POWER TRANSISTOR; 功率晶体管
2SD1898_12
型号: 2SD1898_12
厂家: Unisonic Technologies    Unisonic Technologies
描述:

POWER TRANSISTOR
功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:121K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SD1898  
NPN SILICON TRANSISTOR  
POWER TRANSISTOR  
„
FEATURES  
*High VCEO= 80V  
*High IC= 1A (DC)  
*Good hFE linearity.  
*Low VCE(SAT)  
*Complements the 2SB1260.  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
SOT-89  
Lead Free  
Halogen Free  
2SD1898G-x-AB3-R  
1
2
3
2SD1898L-x-AB3-R  
B
C
E
Tape Reel  
Note: Pin Assignment: B: Base C: Collector  
E: Emitter  
www.unisonic.com.tw  
1 of 2  
Copyright © 2012 Unisonic Technologies Co., Ltd  
QW-R208-030.C  
2SD1898  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS ( TA=25℃, unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
Collector-Base Voltage  
100  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
5
V
Collector Current(DC)  
1
A
Collector Current(PULSE) (Note 2)  
Collector Power Dissipation (Note 3)  
Collector Power Dissipation (Note 3)  
Junction Temperature  
ICP  
2
A
Pc  
0.5  
2
W
W
Pc  
TJ  
150  
Storage Temperature  
TSTG  
-55 ~ +150  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Duty=/1/2,Pw=200ms  
3. When mounted on a 40*40*0.7 mm ceramic board.  
„
ELECTRICAL CHARACTERISTICS (TA=25, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
IC= 50μA  
MIN TYP MAX UNIT  
Collector Base Breakdown Voltage  
Collector Emitter Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Cut-Off Current  
100  
80  
5
V
V
IC= 1mA  
IE=50μA  
V
VCB=80V, IE=0A  
VEB=4V , IC=0A  
VCE=3V, IC= 0.5A  
1
1
μA  
μA  
Emitter Cut-Off Current  
IEBO  
DC Current Transfer Ratio  
Collector-Emitter Saturation Voltage  
Transition Frequency  
hFE  
82  
390  
0.4  
VCE(SAT) IC=500mA, IB= 20mA  
0.15  
100  
20  
V
fT  
VCE=10V, IE= -50mA, f=100MHz  
MHz  
pF  
Output Capacitance  
COB  
VCB= 10V, IE= 0A, f=1MHz  
„
CLASSIFICATION OF hFE  
RANK  
P
Q
R
RANGE  
82-180  
120-270  
180-390  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 2  
QW-R208-030.C  
www.unisonic.com.tw  

相关型号:

2SD1899

TO-252 Plastic-Encapsulated Transistors
TRSYS

2SD1899

NPN PLASTIC ENCAPSULATE TRANSISTORS
WEITRON

2SD1899-K

NPN Silicon Epitaxial Transistor
MCC

2SD1899-L

NPN Silicon Epitaxial Transistor
MCC

2SD1899-L-TP-HF

Small Signal Bipolar Transistor,
MCC

2SD1899-M

NPN Silicon Epitaxial Transistor
MCC

2SD1899-M-TP-HF

Small Signal Bipolar Transistor,
MCC

2SD1899-Z

NPN SILICON EPITAXIAL TRANSISTOR MP-3
NEC

2SD1899-Z

TO-252 Plastic-Encapsulated Transistors
TRSYS

2SD1899-Z

NPN Silicon Epitaxial Transistor
KEXIN

2SD1899-Z

SILICON POWER TRANSISTOR
RENESAS

2SD1899-Z

Low VCE(sat). High hFE.Collector-base voltage VCBO 60 V
TYSEMI