2SD2136 [UTC]
POWER TRANSISTOR; 功率晶体管
| 型号： | 2SD2136 |
| 厂家： | 
Unisonic Technologies |
| 描述： | POWER TRANSISTOR |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SD2136
NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
DESCRIPTION
The UTC 2SD2136 is designed for power amplification
FEATURES
*High forward current transfer ratio hFE which has
satisfactory linearity.
*Low collector to emitter saturation voltage VCE(sat)
*Allowing supply with the radial taping.
1
TO-126
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Ic
RATING
UNIT
V
V
V
A
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
6
3
Peak Collector Current
Collector Dssipation
Junction Temperature
Storage Temperature
Icp
Pc
Tj
Tstg
5
1.5
150
A
W
°C
°C
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Emitter Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Transfer Ratio
SYMBOL
VCEO
ICEO
TEST CONDITIONS
Ic=30mA ,IB=0
MIN TYP MAX UNIT
60
V
VCE=60V,IB=0
VCE=60V,VBE=0
VEB=6V,Ic=0
300
200
1
µA
µA
mA
ICES
IEBO
hFE1*
VCE=4V,Ic=1A
VCE=4V,Ic=3A
40
10
250
hFE2
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Fall time
Turn on time
Storage Time
VCE(sat) Ic=3A,IB=0.375A
1.2
1.8
V
V
MHz
µS
µS
µS
VBE
fT
tf
VCE=4V,Ic=3A
VCE=5V,IE= -0.1A,f=200MHz
Ic=1A, IB1=0.1A, IB2= -0.1A
220
0.4
0.5
2.5
ton
tstg
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-011,A
UTC2SD2136
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
Q
P
R
RANGE
70-150
40-90
120-250
ELECTRICAL CHARACTERISTICS CURVES
Pc-Ta
IC-VCE
90mA
2.0
5
4
Tc=25℃
without head sink
1.6
80mA
70mA
60mA
IB=100mA
1.2
3
2
50mA
40mA
30mA
0.8
20mA
0.4
0
1
0
10mA
10
20
12
40
2
6
0
60
100
140
4
120
0
8
80
160
Collector to Emitter Voltage VCE(V)
Ambient temperature Ta (℃)
VCE(sat)-Ic
IC-VBE
100
8
IC/IB=6
VCE=4V
7
6
5
4
30
10
Tc=25℃
3
1
Tc=-25℃
Tc=100℃
Tc=100℃
3
2
Tc=25℃
0.3
0.1
Tc=-25℃
1
0
0.03
0.01
2.0 2.4
Base to Emitter Voltage VBE(V)
0.4
1.2
0.8
0.3
1
3
0
1.6
10
0.1
0.03
0.01
Collector Current Ic(A)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-011,A
UTC2SD2136
NPN EPITAXIAL SILICON TRANSISTOR
hFE-Ic
fT-Ic
10000
300
250
200
150
100
VCE=4V
VCB=10V
Tc=25℃
f=200MHz
3000
1000
Tc=100℃
Tc=25℃
300
100
Tc=-25℃
30
10
50
0
3
1
0.3
1
3
10
0.1
0.03
-0.3
-1
-3
0.01
-10
-0.1
-0.03
-0.01
Collector Current Ic(A)
Collector Current Ic(A)
Rth (t) ----t
104
without head sink
103
102
10
1
10-1
10-2
Area of safe operation (ASO)
102
10-3
10-1
1
10
103
104
10-4
Time t (s)
100
Single pulse
Tc=25℃
30
10
Icp
t=100ms
3
1
Ic
t=1s
0.3
0.1
t=10ms
0.03
0.01
3
10
30
100
1
0.3
0.1
Collector to Emitter Voltage VCE(V)
3
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-011,A
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