2SD2470-E-T9S-K [UTC]
STROBO AND DC/DC CONVERTERS; 频闪和DC / DC转换器
| 型号： | 2SD2470-E-T9S-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | STROBO AND DC/DC CONVERTERS |
| 文件： | 总3页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD2470
NPN SILICON TRANSISTOR
STROBO AND DC/DC
CONVERTERS
ꢀ
FEATURES
* Low saturation voltage
V= 0.25V(typ) at IC/IB= 3A/0.1A
* Collector current of 5A is possible
1
TO-92SP
*Pb-free plating product number: 2SD2470L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
TO-92SP
Packing
Bulk
Normal
Lead Free Plating
1
2
3
2SD2470-x-T9S-K
2SD2470L-x-T92-K
E
C
B
2SD2470L-x-T9S-K
(1)Packing Type
(2)Package Type
(3)Rank
(1) K: Bulk
(2) T9S: TO-92SP
(3) refer to Classification of hFE
(4) L: Lead Free Plating, Blank: Pb/Sn
(4)Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R216-003,D
2SD2470
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
15
Collector-Emitter Voltage
Emitter-Base Voltage
10
V
10
V
Collector Current (DC)
Collector Current (PULSE)*
Collector Power Dissipation
Junction Temperature
Storage Temperature
5
8
A
ICP
A
PC
0.4
W
℃
℃
TJ
+150
-55 ~ +150
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Single Pulse =10ms
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
15
TYP
MAX
UNIT
V
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVCBO IC= 50µA
BVCEO IC= 1mA
BVEBO IE=50µA
10
V
10
V
ICBO
IEBO
hFE
VCB=10V, IE=0
0.1
0.5
820
0.5
µA
µA
VEB= 8V, IC=0
DC Current Gain
VCE= 2V, IC= 2A
270
Collector-Emitter Saturation Voltage
Transition Frequency
VCE(SAT) IC/IB=3A /0.1A
0.25
170
30
V
fT
VCE=6V, IE=0.05A, f=100MHz
MHz
pF
Output Capacitance
Cob
VCB= 10V, IE= 0 A, f=1MHz
ꢀ
CLASSIFICATION OF hFE
RANK
S
E
RANGE
270~560
450~820
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R216-003,D
www.unisonic.com.tw
2SD2470
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
V
CE(SAT) vs. I
C
1000
IC
/IB=30
100
10
1
10m
100m
1
10
IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R216-003,D
www.unisonic.com.tw
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