2SD667G-T9N-B [UTC]
SILICON NPN EPITAXIAL; NPN硅外延
| 型号： | 2SD667G-T9N-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | SILICON NPN EPITAXIAL |
| 文件： | 总4页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD667
NPN SILICON TRANSISTOR
SILICON NPN EPITAXIAL
DESCRIPTION
The UTC 2SD667 is a NPN epitaxial silicon transistor, which
can be used as a low frequency power amplifier.
FEATURES
* Low frequency power amplifier
* Halogen Free
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
1
E
E
2
C
C
3
B
B
2SD667G-T9N-B
2SD667G-T9N-K
TO-92NL
TO-92NL
Tape Box
Bulk
www.unisonic.com.tw
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R211-019.A
2SD667
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
120
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
100
V
6
V
1.0
A
Collector Peak Current (Note2)
Collector Power Dissipation
Junction Temperature
ICP
2.0
A
PC
0.9
W
°C
°C
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10ms, Duty cycle≤20%
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=100μA, IE=0
MIN TYP MAX UNIT
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cutoff Current
120
100
6
V
V
IC=10mA, RBE=∞
IE=100μA, IC=0
VCB=120V, IE=0
VEB=6V, IC=0
V
500
500
330
nA
nA
Emitter Cutoff Current
IEBO
hFE1
VCE=2V, IC=150mA
VCE=5V, IC=1A
140
40
DC Current Transfer Ratio
hFE2
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=500mA, IB=50mA
0.5
1.1
V
V
UNISONIC TECHNOLOGIES CO., LTD
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QW-R211-019.A
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2SD667
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-
Emitter Voltage
Emitter Current vs. Emitter-Base Voltage
180
160
140
120
100
80
120
100
80
IB=1090μA
IB=890μA
IB=690μA
60
IB=490μA
60
40
40
20
IB=290μA
IB=90μA
20
0
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
Emitter-Base Voltage, VEB (V)
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R211-019.A
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2SD667
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-
Emitter Voltage
1200
1000
IB=13.25mA
IB=8.25mA
800
600
400
200
0
IB=3.25mA
0
2
4
6
8
10
Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R211-019.A
www.unisonic.com.tw
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