2SD669AL-C-T9N-B [UTC]
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92NL, 3 PIN;
| 型号： | 2SD669AL-C-T9N-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92NL, 3 PIN 放大器 晶体管 |
| 文件： | 总5页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with
UTC 2SB649/A
Lead-free: 2SD669L/2SD669AL
Halogen-free: 2SD669G/2SD669AG
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
2SD669L-x-AA3-R
2SD669L-x-AB3-R
2SD669L-x-T60-K
2SD669L-x-T6C-K
2SD669L-x-T92-B
2SD669L-x-T92-K
2SD669L-x-T9N-B
2SD669L-x-T9N-K
2SD669L-x-T9N-R
2SD669L-x-TM3-T
2SD669L-x-TN3-R
2SD669L-x-TN3-T
Halogen-Free
1
B
B
E
E
E
E
E
E
E
E
B
B
2
3
E
E
B
B
B
B
B
B
B
B
E
E
2SD669-x-AA3-R
2SD669-x-AB3-R
2SD669-x-T60-K
2SD669-x-T6C-K
2SD669-x-T92-B
2SD669-x-T92-K
2SD669-x-T9N-B
2SD669-x-T9N-K
2SD669-x-T9N-R
2SD669-x-TM3-T
2SD669-x-TN3-R
2SD669-x-TN3-T
2SD669G-x-AA3-R
2SD669G-x-AB3-R
2SD669G-x-T60-K
2SD669G-x-T6C-K
2SD669G-x-T92-B
2SD669G-x-T92-K
2SD669G-x-T9N-B
2SD669G-x-T9N-K
2SD669G-x-T9N-R
2SD669G-x-TM3-T
2SD669G-x-TN3-R
2SD669G-x-TN3-T
SOT-223
SOT-89
TO-126
TO-126C
TO-92
C
C
C
C
C
C
C
C
C
C
C
C
Tape Reel
Tape Reel
Bulk
Bulk
Tape Box
Bulk
TO-92
TO-92NL
TO-92NL
TO-92NL
TO-251
TO-252
TO-252
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 5
QW-R204-005,F
2SD669/A
NPN SILICON TRANSISTOR
ORDERING INFORMATION(Cont.)
Ordering Number
Lead Free Plating
Pin Assignment
Package
Packing
Normal
Halogen-Free Plating
2SD669AG-x-AA3-R
2SD669AG-x-AB3-R
2SD669AG-x-T60-K
2SD669AG-x-T6C-R
2SD669AG-x-T92-B
2SD669AG-x-T92-K
2SD669AG-x-T9N-B
2SD669AG-x-T9N-K
2SD669AG-x-T9N-R
2SD669AG-x-TM3-T
2SD669AG-x-TN3-R
2SD669AG-x-TN3-T
1
B
B
E
E
E
E
E
E
E
E
B
B
2
3
E
E
B
B
B
B
B
B
B
B
E
E
2SD669A-x-AA3-R
2SD669A-x-AB3-R
2SD669A-x-T60-K
2SD669A-x-T6C-R
2SD669A-x-T92-B
2SD669A-x-T92-K
2SD669A-x-T9N-B
2SD669A-x-T9N-K
2SD669A-x-T9N-R
2SD669A-x-TM3-T
2SD669A-x-TN3-R
2SD669A-x-TN3-T
2SD669AL-x-AA3-R
2SD669AL-x-AB3-R
2SD669AL-x-T60-K
2SD669AL-x-T6C-R
2SD669AL-x-T92-B
2SD669AL-x-T92-K
2SD669AL-x-T9N-B
2SD669AL-x-T9N-K
2SD669AL-x-T9N-R
2SD669AL-x-TM3-T
2SD669AL-x-TN3-R
2SD669AL-x-TN3-T
SOT-223
SOT-89
TO-126
TO-126C
TO-92
C
C
C
C
C
C
C
C
C
C
C
C
Tape Reel
Tape Reel
Bulk
Bulk
Tape Box
Bulk
TO-92
TO-92NL
TO-92NL
TO-92NL
TO-251
TO-252
TO-252
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-005,F
2SD669/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
180
120
160
5
2SD669
Collector-Emitter Voltage
VCEO
V
2SD669A
Emitter-Base Voltage
Collector Current
VEBO
IC
V
A
1.5
3
Collector Peak Current
lC(PEAK)
A
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
SOT-223
TO-126
0.5
1
W
W
℃
℃
PD
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN
180
120
160
5
TYP MAX UNIT
V
Collector to Base Breakdown Voltage
BVCBO IC=1mA, IE=0
BVCEO IC=10mA, RBE=∞
BVEBO IE=1mA, IC=0
Collector to Emitter Breakdown 2SD669
V
Voltage
2SD669A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
V
ICBO
hFE1
hFE2
VCB=160V, IE=0
10
μA
VCE=5V, IC=150mA (Note)
VCE=5V, IC=500mA (Note)
60
30
320
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC=600mA, IB=50mA (Note)
1
V
V
VBE
fT
VCE=5V, IC=150mA (Note)
VCE=5V, IC=150mA (Note)
VCB=10V, IE=0, f=1MHz
1.5
Current Gain Bandwidth Product
Output Capacitance
140
14
MHz
pF
Cob
Note: Pulse test.
CLASSIFICATION OF hFE1
RANK
B
C
D
RANGE
60-120
100-200
160-320
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-005,F
2SD669/A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Base to Emitter Saturation Voltage
vs. Collector Current
Gain Bandwidth Product
vs. Collector Current
1.2
240
200
160
120
80
VCE=5V
Ta=25℃
IC=10IB
1.0
0.8
0.6
0.4
0.2
0
40
0
10
1
3
10 30
100 300 1,000
30
100
300
1,000
Collector Current, IC (mA)
Collector Current, IC (mA)
Area of Safe Operation
Collector Output Capacitance
vs. Collector to Base Voltage
200
100
50
3
f=1MHz
IE=0
(13.3V, 1.5A)
1.0
40V, 0.5A
2SD669A
0.3
0.1
20
10
DC Operation (TC=25℃)
(120V, 0.04A)
5
2
0.03
0.01
(160V, 0.02A)
2SD669
100
300
1
3
10
30
1
2
5
10 20
50 100
Collector to Emitter Voltage, VCE (V)
Collector to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
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2SD669/A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R204-005,F
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