2SD669XL-X-T9N-K [UTC]
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR; 双极型功率通用晶体管
| 型号： | 2SD669XL-X-T9N-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 文件： | 总4页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
1
SOT-89
TO-252
SOT-223
TO-251
APPLICATIONS
1
1
Low frequency power amplifier complementary pair with UTC
2SB649/A
*
1
1
TO-92
TO-92NL
TO-126C
1
1
TO-126
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
E
E
E
E
E
E
E
B
B
B
2
3
E
E
B
B
B
B
B
B
B
E
E
E
2SD669xL-x-AA3-R
2SD669xL-x-AB3-R
2SD669xL-x-T60-K
2SD669xL-x-T6C-K
2SD669xL-x-T92-B
2SD669xL-x-T92-K
2SD669xL-x-T92-R
2SD669xL-x-T9N-B
2SD669xL-x-T9N-K
2SD669xL-x-TM3-T
2SD669xL-x-TN3-R
2SD669xL-x-TN3-T
2SD669xG-x-AA3-R
2SD669xG-x-AB3-R
2SD669xG-x-T60-K
2SD669xG-x-T6C-K
2SD669xG-x-T92-B
2SD669xG-x-T92-K
2SD669xG-x-T92-R
2SD669xG-x-T9N-B
2SD669xG-x-T9N-K
2SD669xG-x-TM3-T
2SD669xG-x-TN3-R
2SD669xG-x-TN3-T
SOT-223
SOT-89
TO-126
TO-126C
TO-92
C
C
C
C
C
C
C
C
C
C
C
C
Tape Reel
Tape Reel
Bulk
Bulk
Tape Box
Bulk
TO-92
TO-92
Tape Reel
Tape Box
Bulk
TO-92NL
TO-92NL
TO-251
TO-252
TO-252
Tube
Tape Reel
Tube
(1) B: Tape Box, K: Bulk, R: Tape Reel
2SD669xL-x-AB3-R
(2) AA3: SOT-223, AB3: SOT-89, T60: TO-126,
(2) T6C: TO-126C, TM3: TO-251, TN3: TO-252,
(2) T92: TO-92, T9N: TO-92NL
(1)Packing Type
(2)Package Type
(3)Rank
(3) x: refer to Classification of hFE1
(4) G: Halogen Free, L: Lead Free
(5) A: 160V, Blank: 120V
(4)Lead Plating
(5) Collector-Emitter Voltage
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Copyright © 2012 Unisonic Technologies Co., Ltd
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2SD669/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
RATINGS
UNIT
V
180
120
160
5
2SD669
Collector-Emitter Voltage
VCEO
V
2SD669A
Emitter-Base Voltage
Collector Current
VEBO
IC
V
A
1.5
3
Collector Peak Current
lC(PEAK)
A
SOT-223/ SOT-89
TO-126
0.5
1.3
1
W
W
W
W
W
W
°C
°C
TO-126C
Power Dissipation
PD
TO-92/TO-92NL
TO-251
0.6
1
TO-252
2
Junction Temperature
Storage Temperature
TJ
150
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
HERMAL DATA
PARAMETER
SOT-89
SYMBOL
RATINGS
UNIT
°C/W
38
14
SOT-223
TO-92/ TO-92NL
TO-126
80
Junction to Case
θJC
6.25
10
TO-126C
TO-251/ TO-252
4.5
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
180
120
160
5
TYP MAX UNIT
V
BVCBO IC=1mA, IE=0
BVCEO IC=10mA, RBE=∞
BVEBO IE=1mA, IC=0
2SD669
2SD669A
Collector to Emitter Breakdown
Voltage
V
V
Emitter to Base Breakdown Voltage
Collector Cut-off Current
ICBO
hFE1
hFE2
VCB=160V, IE=0
10
μA
VCE=5V, IC=150mA (Note)
VCE=5V, IC=500mA (Note)
60
30
320
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC=600mA, IB=50mA (Note)
1
V
V
VBE
fT
VCE=5V, IC=150mA (Note)
VCE=5V, IC=150mA (Note)
VCB=10V, IE=0, f=1MHz
1.5
Current Gain Bandwidth Product
Output Capacitance
140
14
MHz
pF
Cob
Note: Pulse test.
CLASSIFICATION OF hFE1
RANK
B
C
D
RANGE
60-120
100-200
160-320
UNISONIC TECHNOLOGIES CO., LTD
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2SD669/A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation
Voltage vs. Collector Current
30
0
1.2
1.0
IC=10 IB
25
0
20
0
0.8
0.6
15
0
10
0
0.4
0.2
0
50
1
VCE=5V
1000
100 300
Collector Current, IC (mA)
1
3
10
30
1
1
1
3
10 30 100 300 10003000
Collector Current, IC (mA)
Base to Emitter Saturation Voltage
vs. Collector Current
Gain Bandwidth Product vs.
Collector Current
1.2
240
200
160
120
80
VCE=5V
TA=25°C
IC=10IB
1.0
0.8
0.6
0.4
0.2
0
40
0
10
30
100
300
1,000
3
10
30
100 300 1,000
Collector Current, IC (mA)
Collector Current, IC (mA)
Collector Output Capacitance
vs. Collector to Base Voltage
f=1MHz
IE=0
Area of Safe Operation
200
100
50
3
1.0
(13.3V, 1.5A)
40V, 0.5A
2SD669A
0.3
0.1
20
10
DC Operation (TC=25°C)
(120V, 0.04A)
5
2
0.03
0.01
(160V, 0.02A)
2SD669
100
Collector to Emitter Voltage, VCE (V)
300
1
3
10
30
2
5
10
20
50 100
Collector to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
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2SD669/A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Typical Transfer Characteristics
VCE=5V
500
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage, VBE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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