2SD882-E-TA3-K [UTC]

MEDIUM POWER LOW VOLTAGE TRANSISTOR; 中功率低电压晶体管
2SD882-E-TA3-K
型号: 2SD882-E-TA3-K
厂家: Unisonic Technologies    Unisonic Technologies
描述:

MEDIUM POWER LOW VOLTAGE TRANSISTOR
中功率低电压晶体管

晶体 晶体管
文件: 总4页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SD882  
NPN SILICON TRANSISTOR  
MEDIUM POWER LOW  
VOLTAGE TRANSISTOR  
1
TO-126  
FEATURES  
* High current output up to 3A  
* Low saturation voltage  
* Complement to 2SB772  
1
TO-126C  
APPLICATIONS  
* Audio power amplifier  
* DC-DC convertor  
* Voltage regulator  
1
TO-92NL  
1
1
TO-251  
TO-252  
*Pb-free plating product number: 2SD882L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
E
E
B
B
B
E
E
2
3
B
B
E
E
E
B
B
2SD882-x-T60-K  
2SD882-x-T6C-K  
2SD882-x-TM3-T  
2SD882-x-TN3-R  
2SD882-x-TN3-T  
2SD882-x-T9N-B  
2SD882-x-T9N-K  
2SD882L-x-T60-K  
2SD882L-x-T6C-K  
2SD882L-x-TM3-T  
2SD882L-x-TN3-R  
2SD882L-x-TN3-T  
2SD882L-x-T9N-B  
2SD882L-x-T9N-K  
TO-126  
TO-126C  
TO-251  
C
C
C
C
C
C
C
Bulk  
Bulk  
Tube  
TO-252  
Tape Reel  
Tube  
TO-252  
TO-92NL  
TO-92NL  
Tape Box  
Bulk  
2SD882L-x-T60-R  
(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel  
(1)Packing Type  
(2)Package Type  
(2) T60: TO-126, T6C: TO-126C, TM3: TO-251,  
TN 3: TO-252, T9N: TO-92NL  
(3)Rank  
(3) x: refer to Classification of h  
FE2  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
1 of 4  
Copyright © 2005 Unisonic Technologies Co., Ltd  
QW-R209-003,C  
2SD882  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (Ta=25, unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
30  
5
V
V
DC  
Pulse  
3
A
Collector Current  
Base Current  
ICP  
7
A
IB  
0.6  
0.5  
A
TO-92NL  
W
(
)
Collector Dissipation Ta=25  
PC  
TO-251/TO-252/  
TO-126/TO-126C  
1
W
Junction Temperature  
Storage Temperature  
TJ  
+150  
TSTG  
-55 ~ +150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN  
40  
30  
5
TYP  
MAX  
UNIT  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCBO IC=100µA, IE=0  
BVCEO IC=1mA, IB=0  
BVEBO IE=100µA, IC=0  
V
V
nA  
nA  
ICBO  
IEBO  
hFE1  
hFE2  
VCB=30V, IE=0  
VEB=3V, IC=0  
1000  
1000  
Emitter Cut-off Current  
VCE=2V, IC=20mA  
VCE=2V, IC=1A  
30  
200  
150  
0.3  
1.0  
80  
DC Current Gain (Note 1)  
100  
400  
0.5  
2.0  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(SAT) IC=2A, IB=0.2A  
VBE(SAT) IC=2A, IB=0.2A  
V
V
fT  
VCE=5V, IC=0.1A  
MHz  
pF  
Cob  
VCB=10V, IE=0, f=1MHz  
45  
Note 1: Pulse test: PW<300µs, Duty Cycle<2%  
CLASSIFICATION OF hFE2  
RANK  
Q
P
E
RANGE  
100-200  
160-320  
200-400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R209-003,C  
www.unisonic.com.tw  
2SD882  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Derating Curve of Safe Operating  
Areas  
Static Characteristics  
150  
100  
1.6  
IB=9mA  
IB=8mA  
IB=7mA  
IB=6mA  
IB=5mA  
1.2  
0.8  
S
/
D
b
l
i
i
s
m
s
i
t
i
e
p
IB=4mA  
d
a
t
i
50  
0
o
n
IB=3mA  
IB=2mA  
l
i
0.4  
0
m
i
t
e
d
IB=1mA  
16  
0
4
8
12  
20  
-50  
0
50  
100  
150 200  
Collector-Emitter voltage (V)  
Case Temperature, TC ()  
Current Gain-BandwidthProduct  
Safe Operating Area  
103  
101  
100  
0
.1  
1
1
m
m
0
m
S
S
S
102  
VCE=5V  
IB=8mA  
IC(max), DC  
101  
100  
10-1  
10-2  
IC(max), Pulse  
101  
10-2  
10-1  
100  
101  
100  
102  
Collector-Emitter Voltage  
Collector Current, Ic (A)  
DC CurrentGain  
Saturation Voltage  
VBE(SAT)  
103  
102  
104  
103  
102  
VCE=2V  
VCE(SAT)  
101  
100  
101  
100  
100  
101  
103  
104  
100  
101  
102  
103  
104  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R209-003,C  
www.unisonic.com.tw  
2SD882  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(Cont.)  
Collector OutputCapacitance  
103  
102  
IE=0  
f=1MHz  
101  
100  
100  
10-1  
10-2  
10-3  
Collector-Base Voltage(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R209-003,C  
www.unisonic.com.tw  

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