2SD882ANLQ [UTC]
Transistor;
| 型号： | 2SD882ANLQ |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772ANL
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
*Pb-free plating product number: 2SD882ANLK
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
PARAMETERS
SYMBOL
VCBO
VCEO
VEBO
Pc
RATINGS
UNIT
V
V
V
W
A
Collector-base voltage
40
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current(DC)
Collector current(PULSE)
Base current
30
5
1
3
7
0.6
Ic
Ic
IB
A
A
Junction Temperature
Storage Temperature
Tj
TSTG
150
-55 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
VCB=30V,IE=0
MIN TYP MAX UNIT
Collector cut-off current
Emitter cut-off current
DC current gain(note 1)
ICBO
IEBO
hFE1
hFE2
1000
1000
nA
nA
VEB=3V,Ic=0
VCE=2V,Ic=20mA
VCE=2V,Ic=1A
30
200
150
0.3
1.0
80
100
400
0.5
2.0
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
VCE(sat)
VBE(sat)
fT
Ic=2A,IB=0.2A
Ic=2A,IB=0.2A
VCE=5V,Ic=0.1A
VCB=10V,IE=0,f=1MHz
V
V
MHz
pF
Cob
45
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R211-016,B
UTC2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400
TYPICAL PARAMETERS PERFORMANCE
Fig.2 Derating curve of safe
operating areas
Fig.1 Static characteristics
Fig.3 Power Derating
150
100
12
8
1.6
IB=9mA
IB=8mA
IB=7mA
1.2
0.8
IB=6mA
IB=5mA
IB=4mA
50
0
4
0
IB=3mA
IB=2mA
IB=1mA
0.4
0
0
4
8
12
16 20
-50
0
50
100
150
200
-50
0
50
100
150
200
Collector-Emitter voltage (V)
Case Temperature, Tc (℃)
Case Temperature,Tc (℃)
Fig.4 Collector Output
capacitance
Fig.5 Current gain-
bandwidth product
Fig.6 Safe operating area
3
3
1
Ic(max),Pulse
10
10
10
Ic(max),DC
VCE=5V
IB=8mA
IE=0
f=1MHz
2
1
2
0
10
10
10
10
1
-1
10
10
0
0
-2
10
10
10
0
-1
10
-2
-3
10
-2
-1
10
0
1
0
1
2
10
10
10
10
10
10
10
10
Collector-Emitter Voltage
Collector current, Ic (A)
Collector-Base Voltage (v)
Fig.7 DC current gain
VCE=2V
Fig.8 Saturation Voltage
VBE(sat)
3
2
1
4
10
10
10
10
3
10
2
10
VCE(sat)
1
10
0
0
10
10
0
10
1
2
3
4
0
1
2
3
4
10
10
10
10
10
10
10
10
10
Collector current, Ic (mA)
Collector current, Ic (mA)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R211-016,B
UTC2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R211-016,B
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