2SD882L-P-T6S-K [UTC]
Small Signal Bipolar Transistor;
| 型号： | 2SD882L-P-T6S-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor |
| 文件： | 总5页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD882
NPN SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
B
B
E
E
E
E
E
2
C
C
C
C
C
C
C
3
E
E
B
B
B
B
B
2SD882L-x-TM3-T
2SD882L-x-TN3-R
2SD882G-x-TM3-T
2SD882G-x-TN3-R
2SD882G-x-T60-K
2SD882G-x-T6C-K
2SD882G-x-T6S-K
2SD882G-x-T9N-B
2SD882G-x-T9N-K
TO-251
TO-252
Tube
Tape Reel
Bulk
2SD882L-x-T60-K
TO-126
2SD882L-x-T6C-K
TO-126C
TO-126S
TO-92NL
TO-92NL
Bulk
2SD882L-x-T6S-K
Bulk
2SD882L-x-T9N-B
Tape Box
Bulk
2SD882L-x-T9N-K
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R209-003.G
2SD882
NPN SILICON TRANSISTOR
MARKING
PACKAGE
MARKING
TO-251
TO-252
TO-126
TO-126C
TO-126S
UTC
2SD882
L: Lead Free
G: Halogen Free
TO-92NL
Data Code
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-003.G
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2SD882
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
30
7
V
V
DC
3
A
Collector Current
Base Current
Pulse
ICP
7
A
IB
0.6
A
TO-251/TO-252
TO-126/TO-126C
TO-126S
1
W
(
)
Collector Dissipation TA=25°C
PC
TO-92NL
0.8
+150
W
°C
°C
Junction Temperature
Storage Temperature
TJ
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
40
30
7
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=100μA, IE=0
BVCEO IC=1mA, IB=0
BVEBO IE=100μA, IC=0
ICBO
IEBO
hFE1
hFE2
V
V
nA
nA
VCB=30V, IE=0
VEB=3V, IC=0
1000
1000
Emitter Cut-off Current
VCE=2V, IC=20mA
VCE=2V, IC=1A
30
200
150
0.3
1.0
80
DC Current Gain (Note)
100
400
0.5
2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=2A, IB=0.2A
VBE(SAT) IC=2A, IB=0.2A
V
V
fT
VCE=5V, IC=0.1A
MHz
pF
Cob
VCB=10V, IE=0, f=1MHz
45
Note: Pulse test: PW<300s, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-003.G
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2SD882
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Current Gain-Bandwidth Product
Safe Operating Area
103
102
101
100
VCE=5V
IB=8mA
IC(max), DC
101
100
10-1
10-2
IC(max), Pulse
10-2
10-1
100
101
100
101
Collector-Emitter Voltage
102
Collector Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-003.G
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2SD882
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
103
102
IE=0
f=1MHz
101
100
100
10-1
10-2
10-3
Collector-Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-003.G
www.unisonic.com.tw
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