2SK2751-AE3-R [UTC]
N-CHANNEL JUNCTION FET; N沟道结型FET
| 型号： | 2SK2751-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL JUNCTION FET |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SK2751
N-CHANNEL JFET
N-CHANNEL JUNCTION FET
FEATURES
* Low noise-figure (NF).
* High gate to drain voltage VGDO
.
APPLICATIONS
* For impedance conversion in low frequency.
* For pyroelectric sensor.
*Pb-free plating product number:2SK2751L
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
2SK2751L-AE3-R
2SK2751L-AL3-R
1
D
D
2
S
S
3
G
G
2SK2751-AE3-R
2SK2751-AL3-R
SOT-23
SOT-323
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
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Copyright © 2007 Unisonic Technologies Co., Ltd
QW-R206-087.C
2SK2751
N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
VGDS
ID
RATINGS
UNIT
V
Gate-Drain Voltage
Drain Current
-40
10
mA
mA
mW
℃
Gate Current
IG
2
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
200
TCH
+150
-55 ~ +150
TSTG
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25±3℃, unless otherwise specified)
PARAMETER
SYMBOL
VGDS
VGSC
IDSS
TEST CONDITIONS
IG=-100µA, VDS=0
MIN
-40
TYP
MAX UNIT
V
Gate-Drain Voltage
Gate-Source Cut-Off Voltage
Drain-Source Cut-Off Current
Gate-Source Leakage Current
Forward Transfer Admittance
Input Capacitance (Common Source)
Output Capacitance (Common Source)
Reverse Transfer Capacitance
(Common Source)
VDS=10V, ID=1µA
VDS=10V, VGS=0
-3.5
4.7
-1
V
1.4
2.5
mA
nA
mS
pF
pF
IGSS
VGS=-20V, VDS=0
| Yfs |
CISS
VDS=10V, VGS=0, f=1kHz
5
1
COSS
VDS=10V, VGS=0, f=1MHz
CRSS
1
pF
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-067.C
www.unisonic.com.tw
2SK2751
N-CHANNEL JFET
TYPICAL CHARACTERISTICS
Power Dissipatio vs. Ambient Temperature
Drain Current vs. Drain Source Voltage
250
200
150
12
Ta=25°C
10
8
VGS=0.6V
6
4
0.4V
0.2V
100
50
0
0V
2
0
-0.2V
0
20
120
Ambient Temperature, Ta (℃)
0
2
12
40
60
80
100
140 160
4
6
8
10
Drain Source Voltage, VDS (V)
Drain Current vs. Gate to Source Voltage
Forward Transfer Admittance vs. Gate to Source Voltage
12
6
5
Ta=-25℃
VDS=10V
VDS=10V
25℃
10
8
75℃
4
3
2
6
4
2
1
0
0
-1
-0.6
-1.6
-1.2
Gate to Source Voltage, VGS (V)
-0.2
0.2
0.6
1
-0.8
-0.4
0
0.4
Gate to Source Voltage, VGS (V)
Forward Transfer Admittance vs. Drain Current
12
10
VDS=25V
Ta=25℃
8
6
4
2
0
0
1
6
2
3
4
5
Drain Current, ID (mA)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-067.C
www.unisonic.com.tw
2SK2751
N-CHANNEL JFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-067.C
www.unisonic.com.tw
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