2SK303G-V2-AE3-R [UTC]
Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3;型号: | 2SK303G-V2-AE3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3 放大器 光电二极管 晶体管 |
文件: | 总3页 (文件大小:138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SK303
JFET
LOW-FREQUENCY
GENERAL-PURPOSE
AMPLIFIER APPLICATIONS
FEATURES
* Ideal For Potentiometers
* Analog Switches
* Low Frequency Amplifiers
* Constant Current Supplies
* Impedance Conversion
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
S
S
S
S
S
S
3
2SK303L-x-AE3-R
2SK303L-x-A3C-R
2SK303L-x-AQ3-R
2SK303L-x-T92-B
2SK303L-x-T92-K
2SK303L-x-T92-R
2SK303G-x-AE3-R
2SK303G-x-A3C-R
2SK303G-x-AQ3-R
2SK303G-x-T92-B
2SK303G-x-T92-K
2SK303G-x-T92-R
SOT-23
SOT-113S
SOT-723
TO-92
D
D
D
G
G
G
G
G
G
D
D
D
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
TO-92
TO-92
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
2SK303-V2
2SK303-V3
2SK303-V4
2SK303-V5
V2
V3
V4
V5
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-071,E
2SK303
JFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IG
RATINGS
30
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
Gate Current
-30
V
10
mA
mA
Drain Current
ID
20
SOT-23
200
Power Dissipation
SOT-113S/SOT-723
TO-92
PD
100
mW
625
Junction Temperature
Storage Temperature
TJ
150
°C
°C
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Gate to Drain Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Cutoff Voltage
BVGDS
IDSS
IG=-10µA
-30
0.6
V
VDS=10V,VGS=0V
VGS=-20V
12.0 mA
IGSS
-1.0
nA
VGS(OFF) VDS=10V, ID=1µA
-1
-4
V
Ω
Drain-Source On-State Resistance
Forward Transfer Admittance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON)
|YFS|
VDS=10mV, VGS=0V
250
6.0
VDS=10V, VGS=0V, f =1MHz
2.5
mS
CISS
5
pF
pF
VDS=10V,VGS=0V,f =1MHz
Reverse Transfer Capacitance
CRSS
1.5
CLASSIFICATION OF IDSS
RANK
V2
0.6 ~ 1.5
V3
1.2 ~ 3.0
V4
2.5 ~ 6.0
V5
IDSS (mA)
5.0 ~ 12.0
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-071,E
www.unisonic.com.tw
2SK303
JFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-071,E
www.unisonic.com.tw
相关型号:
2SK303G-V3-AE3-R
Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3
UTC
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