2SK545L-B10-AE3-R [UTC]
Small Signal Field-Effect Transistor;
| 型号： | 2SK545L-B10-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Field-Effect Transistor |
| 文件： | 总3页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SK545
Preliminary
JFET
IMPEDANCE CONVERTER
APPLICATIONS
3
DESCRIPTION
1
2
The UTC 2SK545 is an N-channel Junction field effect transistor.
SOT-23
It uses UTC’s advanced technology to provide customers low CISS
and low IGSS
(TO-236)
.
The UTC 2SK545 is suitable for infrared sensor and impedance
converter applications.
FEATURES
* Low Input Capacitance
* Low Gate-Source Leakage Current
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Tape Reel
Lead Free
Halogen Free
1
2
3
2SK545L-xx-AE3-R
2SK545G-xx-AE3-R
D
S
G
2SK545L-xx-AE3-R
(1) Packing Type
(2) Package Type
(3) Rank
(1) R: Tape Reel
(2) AE3: SOT-23
(3) xx: refer to Classification of lDSS
(4) G: Halogen Free, L: Lead Free
(4) Halogen Free
MARKING
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-102.a
2SK545
Preliminary
JFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGDS
IG
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Drain Voltage
Gate Current
40
-40
V
10
1
mA
mA
mW
°C
Drain Current
ID
Power Dissipation
Junction Temperature
Storage Temperature
PD
125
TJ
150
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
V(BR)GDS ID=-10µA, VDS=0V
MIN TYP MAX UNIT
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
-40
V
-500 pA
300 µA
IGSS
IDSS
VGS=-20V, VDS=0V
VDS=10V, VGS=0V
30
VGS(OFF) VDS=10V, ID=1µA
-1.5 -4.0
V
Forward Transfer Admittance
Input Capacitance
|yfs|
CISS
CRSS
VGS=0V, VDS=10V, f=1.0KHz
0.05 0.13
1.7
mS
pF
pF
VGS=0V, VDS=10V, f=1.0MHz
Reverse Transfer Capacitance
0.7
CLASSIFICATION OF IDSS
RANK
B10
30~80
B11
B12
RANGE
60~180
150~300
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R102-102.a
www.unisonic.com.tw
2SK545
Preliminary
JFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R102-102.a
www.unisonic.com.tw
相关型号：
2SK55
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
RENESAS
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