30N06L-TA3-R [UTC]
30 Amps, 60 Volts N-CHANNEL POWER MOSFET; 30安培, 60伏特N沟道功率MOSFET型号: | 30N06L-TA3-R |
厂家: | Unisonic Technologies |
描述: | 30 Amps, 60 Volts N-CHANNEL POWER MOSFET |
文件: | 总8页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
30N06
MOSFET
30 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
ꢀ
DESCRIPTION
TO-220
The UTC 30N06 is a low voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
1
TO-220F
ꢀ
FEATURES
* RDS(ON) = 40mΩ@VGS = 10 V
*Pb-free plating product number: 30N06L
* Ultra low gate charge ( typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
ꢀ
SYMBOL
2.Drain
1.Gate
3.Source
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
3
S
S
30N06-TA3-T
30N06-TF3-T
30N06L-TA3-T
30N06L-TF3-T
TO-220
G
G
Tube
Tube
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
30N06L-TA3-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Lead Plating
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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QW-R502-087,A
30N06
MOSFET
ꢀ
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate to Source Voltage
60
±20
VGSS
V
TC = 25℃
30
A
Continuous Drain Current
ID
TC = 100℃
21.3
A
Pulsed Drain Current (Note 1)
IDM
EAS
120
A
Avalanche Energy, Single Pulsed (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation (TC = 25℃)
Derating Factor Above 25℃
300
mJ
mJ
V/ns
W
EAR
8
dv/dt
7.5
80
PD
0.53
W/℃
℃
Operation Junction Temperature
Storage Temperature
TJ
-55 ~ +150
-55 ~ +150
TSTG
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
SYMBOL
θJC
MIN
TYP
0.5
MAX
1.8
UNIT
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
θCS
Thermal Resistance, Junction-to-Ambient
θJA
62.5
ꢀ
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
60
V
VDS = 60 V, VGS = 0 V
1
µA
µA
Drain-Source Leakage Current
VDS = 48 V, VGS = 0 V, TJ = 150℃
VGS = 20V, VDS = 0 V
10
Gate-Source Leakage
Current
Forward
Reverse
100 nA
-100 nA
IGSS
VGS = -20V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ID = 250 µA, Referenced to 25℃
0.06
32
V/℃
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 15 A
2.0
4.0
40
V
mΩ
Dynamic Characteristics
Input Capacitance
CISS
COSS
CRSS
800
300
80
pF
pF
pF
VGS = 0 V, VDS = 25 V,f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
tD(OFF)
tF
12
79
50
52
20
6
ns
ns
VDD = 30V, ID =15 A, VGS=10V
(Note 4, 5)
Turn-Off Delay Time
Turn-Off Fall Time
ns
ns
Total Gate Charge
QG
30
nC
nC
nC
VDS = 60V, VGS = 10 V, ID = 24A
(Note 4, 5)
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
QGS
QGD
9
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30N06
MOSFET
ꢀ
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
VSD
IS
IS = 30A, VGS = 0 V
1.4
30
V
A
Integral Reverse p-n Junction Diode in
Maximum Continuous Drain-Source
Diode Forward Current
the MOSFET
D
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
120
A
G
S
Reverse Recovery Time
Reverse Recovery Charge
tRR
IS = 30A, VGS = 0 V
dIF / dt = 100 A/µs (Note4)
40
70
ns
QRR
µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH, IAS=30A, RG=20Ω, Starting TJ=25℃
3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
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30N06
MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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30N06
MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON )
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
1mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RG
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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30N06
MOSFET
ꢀ
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-State Characteristics
V
GS
Top: 15V
10 V
8 V
℃
102
101
7 V
6 V
5 .5V
102
101
0
5
1
5V
Bottorm : 4.5V
4.5V
℃
5
2
Note:
1. VDS=25V
2. 20µs Pulse Test
100
100
101
Drain-Source Voltage, VDS (V)
10-1
100
2
3
4
5
6
7
8
9 10
Gate-Source Voltage, VGS (V)
Reverse Drain Current vs. Allowable Case
Temperature
On-Resistance Variation vs. Drain Current and
Gate Voltage
100
102
80
60
150℃
VGS=10V
101
25℃
40
VGS=20V
*Note:
20
1. VGS=0V
2. 250µs Test
0.0
100
0
20
40
60
80 100 120
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Drain Current, ID (A)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
2000
1500
12
Ciss=Cgs +Cgd (Cds=shorted)
C
oss=Cds +Cgd
10
Crss=Cgd
VDS=30V
Coss
*Note:
8
6
4
1. VGS=0V
2. f = 1MHz
VDS=48V
C
iss
1000
500
2
Crss
*Note: ID=30A
0
0
10
15
0
5
20
25
0.1
1
10
Total Gate Charge, QG (nC)
Drain-Source Voltage, VDC (V)
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30N06
MOSFET
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs. Junction
Temperature
On-Resistance Variation vs.
Junction Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
*Note:
1. VGS=0V
2. ID=250µA
*Note:
1. VGS=10V
2. ID=15A
0.9
0.8
0.5
0.0
200
-100 -50
0
50 100 150
-50
0
50
100
150
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Maximum Drain Current vs. Case Temperature
30
Maximum Safe Operating
Operation in This
Area by RDS (ON)
100
10
100µs
20
10
0
10ms
DC
1ms
1
*Note:
1. Tc=25℃
2. TJ=150℃
3.Single Pulse
0.1
150
25
50
75
100
125
1
10
100
1000
Drain-Source Voltage, VDS (V)
Case Temperature, TC (℃)
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.1
0.05
0.02
*Note:
0.01
1.
ZθJC (t) = 0.88℃/W Max.
0.01
2. Duty Factor , D=t1/t2
Single pulse
3. TJ -TC=PDM×ZθJC (t )
1
10
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration, t1 (sec)
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30N06
MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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