3LN01MG-AL3-R [UTC]
N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS; N沟道MOSFET硅通用开关设备的应用
| 型号： | 3LN01MG-AL3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS |
| 文件： | 总3页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3LN01M
Preliminary
Power MOSFET
N CHANNEL SILICON
MOSFET GENERAL-PURPOSE
SWITCHING DEVICE
APPLICATIONS
DESCRIPTION
The 3LN01M uses UTC advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device’s general purpose is for switching device
applications.
FEATURES
* RDS(ON) = 3.7Ω @VGS = 4 V
* Ultra low gate charge ( typical 1.58 nC )
* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )
* Fast switching capability
Lead-free:
Halogen-free: 3LN01MG
3LN01ML
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
3LN01ML-AL3-R
Pin Assignment
Package
Packing
Normal
Halogen-Free
1
2
3
3LN01M-AL3-R
3LN01MG-AL3-R
SOT-323
S
G
D
Tape Reel
MARKING
www.unnic.com.tw
Copyright © 2008 Unisonic Tnologies Co., Ltd
1 of 4
QW-R502-285.a
3LN01M
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±10
VGSS
V
DC
0.15
Drain Current
ID
A
Pulse(Note 2)
0.6
Power Dissipation
PD
0.15
W
℃
Storage Temperature
TSTG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width≦10μs, Duty cycle≦1%
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
V
VGS=0V, ID=1mA
VDS=30V,VGS=0V
VGS=±8V, VDS=0V
30
µA
µA
1
IGSS
±10
V
Ω
S
Cutoff Threshold Voltage
VGS(OFF) VDS=10V, ID=100µA
VGS=4V, ID=80mA
0.4
1.3
3.7
2.9
3.7
6.4
Static Drain-Source On-Resistance
RDS(ON)
VGS=2.5V, ID=40mA
GS=1.5V, ID=10mA
5.2
V
12.8
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
gFS
VDS=10V, ID=80mA
0.15 0.22
CISS
COSS
CRSS
7.0
5.9
2.3
pF
pF
pF
VDS=10V, VGS=0 V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
nC
nC
nC
ns
ns
ns
ns
1.58
0.26
0.31
19
VDS=10V, VGS=10V, ID=150mA
See specified Test Circuit
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
65
tD(OFF)
tF
155
120
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD IS=150mA, VGS=0V
0.87
1.2
V
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-285.a
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3LN01M
Preliminary
Power MOSFET
Switching Time Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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