3N50KG-TF1-T [UTC]
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR;
| 型号： | 3N50KG-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总7页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N50K-MK
Power MOSFET
3A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N50K-MK is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 3N50K-MK is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 3.2Ω @ VGS = 10V, ID = 1.5A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
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3N50K-MK
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
3N50KG-TA3-T
3N50KG-TF3-T
3N50KG-TF1-T
3N50KG-TF2-T
3N50KG-TF3-T
3N50KG-TM3-T
3N50KG-TMS-T
3N50KG-TMS2-T
3N50KG-TMS4-T
3N50KG-TN3-R
3N50KG-TND-R
1
2
3
S
S
S
S
S
S
S
S
S
S
S
3N50KL-TA3-T
3N50KL-TF3-T
3N50KL-TF1-T
3N50KL-TF2-T
3N50KL-TF3-T
3N50KL-TM3-T
3N50KL-TMS-T
3N50KL-TMS2-T
3N50KL-TMS4-T
3N50KL-TN3-R
3N50KL-TND-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
TO-252D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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3N50K-MK
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
500
±30
V
Continuous (TC=25°C)
Pulsed (Note 2)
3 (Note 5)
12 (Note 5)
3
A
Drain Current
IDM
A
Avalanche Current (Note 2)
Avalanche Energy
IAR
A
Single Pulsed (Note 3)
EAS
150
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.5
75
TO-220F/TO-220F1
TO-220F3
25
26
W
W
Power Dissipation
PD
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
50
W
0.5
0.2
W/°C
W/°C
W/°C
TO-220F/TO-220F1
TO-220F3
Derate above 25°C
PD
TO-220F2
0.208
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
0.4
W/°C
Power Dissipation
36
0.288
W
W/°C
°C
PD
Derate above 25°C
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 33.3 mH, IAS = 3A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature.
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATING
62.5
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
θJA
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
110
1.67
4.9
TO-220F/TO-220F1
TO-220F3
Junction to Case
θJC
°C/W
TO-220F2
4.8
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
2.5
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3N50K-MK
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
500
3.0
V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=1.5A
5.0
3.2
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
415 530 pF
250 350 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
50
60
pF
tD(ON)
tR
tD(OFF)
tF
42
18
60
25
ns
ns
VDD=30V, ID=0.5A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
103 130 ns
18
10
25
13
ns
nC
nC
nC
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
1.5
5.5
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
3
A
A
V
ISM
VSD
12
1.4
IS=3A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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3N50K-MK
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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3N50K-MK
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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3N50K-MK
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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