3N65KL-TN3-R [UTC]
3A, 650V N-CHANNEL POWER MOSFET; 3A ， 650V N沟道功率MOSFET
| 型号： | 3N65KL-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 3A, 650V N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N65K
Power MOSFET
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N65K is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) = 3.8Ω @VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
RDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
D
D
D
3
S
S
S
3N65KL-TF3-T
3N65KL-TN3-R
3N65KL-TN3-T
3N65KG-TF3-T
3N65KG-TN3-R
3N65KG-TN3-T
TO-220F
TO-252
TO-252
G
G
G
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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3N65K
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage
650
±30
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
3.0
A
ID
3.0
A
IDM
12
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
45
mJ
mJ
V/ns
Avalanche Energy
EAR
7.5
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.5
75
Power Dissipation
TO-220F/TO-220F1
TO-251/TO-252
PD
34
W
50
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
TOPR
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
TO-220F
TO-252
TO-220F
TO-252
Junction to Ambient
Junction to Case
θJA
110
3.68
θJC
°C/W
2.5
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3N65K
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
650
V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°C
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID=250μA,Referenced to 25°C
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
2.9 3.8
V
VGS = 10V, ID = 1.5A
Ω
CISS
COSS
CRSS
350 450 pF
50 65 pF
5.5 7.5 pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
10
30
20
30
10
2.7
4.9
30
70
50
70
13
ns
ns
Turn-On Rise Time
VDD = 325V, ID = 3.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS= 520V,ID= 3.0A,
Gate-Source Charge
QGS
QDD
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 3.0 A
1.4
3.0
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12
A
Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
210
1.2
ns
μC
VGS = 0 V, IS = 3.0 A,
dIF/dt = 100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
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3N65K
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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3N65K
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
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TYPICAL CHARACTERISTICS(Cont.)
Maximum Drain Current vs. Case
Temperature
Transient Thermal Response Curve
3.0
2.5
2.0
1
D=0.5
0.2
0.1
1.5
1.0
0.1
0.05
0.02
0.01
Notes:
1. θJC (t) = 1.18 /W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
0.5
0
Single Pulse
0.01
10-5
10-4 10-3
10-2
10-1
100
101
150
25
50
75
100
125
Square Wave Pulse Duration, t1 (sec)
Case Temperature, TC (
)
Safe Operating Area
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
10ms
DC
100
Notes:
1. TJ=25
2. TJ=150
3. Single Pulse
10-1
10-2
650
100
101
102
103
Drain-Source Voltage, VDS (V)
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3N65K
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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