3N90ZG-TF1-T [UTC]

3 Amps, 900 Volts N-CHANNEL POWER MOSFET;


型号：	3N90ZG-TF1-T
厂家：	Unisonic Technologies
描述：	3 Amps, 900 Volts N-CHANNEL POWER MOSFET
文件：	总6页 (文件大小：185K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

3N90Z

Preliminary

Power MOSFET

3 Amps, 900 Volts

N-CHANNEL POWER

MOSFET

DESCRIPTION

The UTC 3N90Z provides excellent R_DS(ON), low gate

charge and operation with low gate voltages. This device is

suitable for use as a load switch or in PWM applications.

FEATURES

* R_DS(ON)=4.1Ω @V_GS=10 V

* Ultra Low Gate Charge ( typical 22.7 nC )

* Low Reverse Transfer Capacitance ( C_RSS= Typical 13 pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Tube

Lead Free

Halogen Free

3N90ZG-TF1-T

3N90ZL-TF1-T

TO-220F1

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 6

QW-R502-913.a

3N90Z

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_DGR

V_GSS

BV_GSO

V_ISO

I_AR

RATINGS

UNIT

Drain-Source Voltage (V_GS=0V)

Drain-Gate Voltage (R_G=20kΩ)

Gate-Source Voltage

900

±20

Gate-Source Breakdown Voltage (I_GS=±1mA)

Insulation Withstand Voltage (DC)

Avalanche Current (Note 2)

Continuous Drain Current

30(MIN)

2500

I_D

Pulsed Drain Current

I_DM

Single Pulse Avalanche Energy (Note 3)

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

E_AS

180

V/ns

°C

dv/dt

P_D

4.5

Junction Temperature

T_J

+150

-55 ~ +150

Storage Temperature

T_STG

Notes:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by T_J(MAX)

3. starting T_J=25 °C, I_D=I_AR, V_DD=50V

4. I_SD≦3A, di/dt≦200A/μs, V_DD≦BV_DSS, T_J≦T_J(MAX)

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATING

62.5

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

UNISONIC TECHNOLOGIES CO., LTD

2 of 6

QW-R502-913.a

www.unisonic.com.tw

3N90Z

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

900

V_DS=900V, V_GS=0V

V_GS=±20V, V_DS=0V

μA

I_GSS

±10 μA

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

3.75 4.5

V_GS=10V, I_D=1.5A

4.1 4.8

Ω

C_ISS

C_OSS

C_RSS

590

Output Capacitance

V_DS=25V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

V_DD=450V, I_D=1.5 A, R_G=4.7Ω

V_GS=10V

Turn-On Rise Time

Turn-Off Delay Time

V_DD=720V, I_D=1.5 A, R_G=4.7Ω

V_GS=10V

Turn-Off Fall Time

Total Gate Charge

Q_G

22.7

4.2

Gate-Source Charge

Q_GS

Q_DD

V_DD=720V, I_D=3A, V_GS=10V

Gate-Drain Charge

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage(Note 1)

Source-Drain Current

V_SD

I_SD

I_SD=3A ,V_GS=0V

1.6

Source-Drain Current (Pulsed)

Reverse Recovery Current

I_SDM

I_RRM

t_RR

8.7

I_SD=3A, di/dt=100A/μs,

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 1. Pulse width=300μs, Duty cycle≦1.5%

510

V_DD=100V, T_J=25°C

Q_RR

2.2

2. C_OSS(EQ)is defined asa constant equivalent capacitance giving the same charging time as C_OSSwhen V_DS

increases from 0to 80% V_DSS

UNISONIC TECHNOLOGIES CO., LTD

3 of 6

www.unisonic.com.tw

QW-R502-913.a

3N90Z

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

V_GS

(Driver)

Period

P.W.

Period

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD

4 of 6

QW-R502-913.a

www.unisonic.com.tw

3N90Z

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

as D.U.T.

50kΩ

Q_G

12V

10V

0.3μF

0.2μF

V_DS

Q_GS

Q_GD

V_GS

DUT

V_GS

3mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD

5 of 6

www.unisonic.com.tw

QW-R502-913.a

3N90Z

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

6 of 6

QW-R502-913.a

www.unisonic.com.tw

3N90ZG-TF1-T [UTC]

相关型号：

3N90ZL-TF1-T

3N91

3N92

3N93

3N94

3N95

3NCB58R3E

3NCB673RE

3NCB93R1E

3NCB976RE

3NCB9K65E

3NCBR121E