40N15LG-TF2-T [UTC]

40A, 150V N-CHANNEL POWER MOSFET;
40N15LG-TF2-T
型号: 40N15LG-TF2-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

40A, 150V N-CHANNEL POWER MOSFET

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
40N15  
Preliminary  
Power MOSFET  
40A, 150V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC 40N15 is an N-channel enhancement MOSFET, it uses  
1
UTC’s advanced technology to provide the customers with perfect  
DS(ON), high switching speed, high current capacity and low gate  
charge.  
TO-220F2  
R
„
FEATURES  
* RDS(ON)<42m@ VGS=10V,ID=20A  
* High Switching Speed  
* High Current Capacity  
* Low Gate Charge(typical 85nC)  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Tube  
Lead Free  
Halogen Free  
40N15LG-TF2-T  
1
G
2
D
3
S
40N15L-TF2-T  
TO-220F2  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 3  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R502-882.a  
40N15  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
150  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±25  
V
Continuous  
Pulsed  
40  
A
Drain Current  
IDM  
180  
A
Avalanche Current  
Avalanche Energy  
IAR  
45.6  
A
Single Pulsed  
Repetitive  
EAS  
650  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
PD  
21  
Peak Diode Recovery dv/dt  
Power Dissipation  
6
210  
Junction Temperature  
Storage Temperature Range  
TJ  
-50~+150  
-50~+150  
°C  
°C  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
62.5  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJC  
0.7  
„
ELECTRICAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VGS=0V, ID=250µA  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
BVDSS  
150  
V
Breakdown Voltage Temperature Coefficient BVDSS/TJ  
0.16  
V/°C  
nA  
Drain-Source Leakage Current  
IDSS  
VGS=0V, VDS=150V  
VGS=+20V, VDS=0V  
VGS=-20V, VDS=0V  
900  
Forward  
Reverse  
+100 nA  
-100 nA  
Gate-Source Leakage Current  
IGSS  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
gFS  
VDS=VGS, ID=250µA  
VGS=10V, ID=20A  
2.2  
5
3.8  
42  
V
mꢀ  
s
Static Drain-Source On-State Resistance  
Forward Transconductance  
DYNAMIC PARAMETERS  
Input Capacitance  
33  
CISS  
COSS  
CRSS  
2500 3250 pF  
Output Capacitance  
520 670  
100 130  
pF  
pF  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
QG  
QGS  
QGD  
tD(ON)  
tR  
85  
15  
41  
35  
110  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=10V, VDD=50V,  
ID=1.3A, IG=100µA  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
Rise Time  
80  
320 650  
210 430  
200 410  
VGS=0~10V, VDD=30V,  
ID=0.5A, RG=25ꢀ  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
Drain-Source Diode Forward Voltage  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
IS  
45.6  
182.4  
1.48  
A
A
ISM  
VSD  
tRR  
IS=40A, VGS=0V  
VGS=0V, IS=45.6A  
dIF/dt=100A/µs  
0.1  
V
130  
ns  
µC  
QRR  
0.55  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R502-882.a  
www.unisonic.com.tw  
40N15  
Preliminary  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R502-882.a  
www.unisonic.com.tw  

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