40N15LG-TF2-T [UTC]
40A, 150V N-CHANNEL POWER MOSFET;型号: | 40N15LG-TF2-T |
厂家: | Unisonic Technologies |
描述: | 40A, 150V N-CHANNEL POWER MOSFET |
文件: | 总3页 (文件大小:151K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
40N15
Preliminary
Power MOSFET
40A, 150V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 40N15 is an N-channel enhancement MOSFET, it uses
1
UTC’s advanced technology to provide the customers with perfect
DS(ON), high switching speed, high current capacity and low gate
charge.
TO-220F2
R
FEATURES
* RDS(ON)<42mΩ @ VGS=10V,ID=20A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 85nC)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Tube
Lead Free
Halogen Free
40N15LG-TF2-T
1
G
2
D
3
S
40N15L-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain
S: Source
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QW-R502-882.a
40N15
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
150
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±25
V
Continuous
Pulsed
40
A
Drain Current
IDM
180
A
Avalanche Current
Avalanche Energy
IAR
45.6
A
Single Pulsed
Repetitive
EAS
650
mJ
mJ
V/ns
W
EAR
dv/dt
PD
21
Peak Diode Recovery dv/dt
Power Dissipation
6
210
Junction Temperature
Storage Temperature Range
TJ
-50~+150
-50~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
0.7
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
VGS=0V, ID=250µA
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
150
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
0.16
V/°C
nA
Drain-Source Leakage Current
IDSS
VGS=0V, VDS=150V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
900
Forward
Reverse
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=20A
2.2
5
3.8
42
V
mꢀ
s
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
33
CISS
COSS
CRSS
2500 3250 pF
Output Capacitance
520 670
100 130
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
85
15
41
35
110
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDD=50V,
ID=1.3A, IG=100µA
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
80
320 650
210 430
200 410
VGS=0~10V, VDD=30V,
ID=0.5A, RG=25ꢀ
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
45.6
182.4
1.48
A
A
ISM
VSD
tRR
IS=40A, VGS=0V
VGS=0V, IS=45.6A
dIF/dt=100A/µs
0.1
V
130
ns
µC
QRR
0.55
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-882.a
www.unisonic.com.tw
40N15
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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