4N30G-TN3-T [UTC]
Power Field-Effect Transistor;
| 型号： | 4N30G-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总3页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N30
Power MOSFET
4A, 300V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N30 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and superior switching
performance.
FEATURES
* RDS(ON)<2Ω @ VGS=10V, ID=4A
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
4N30L-TN3-R
4N30L-TN3-T
Halogen Free
1
2
D
D
3
S
S
4N30G-TN3-R
4N30G-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-850.A
4N30
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Avalanche Current
300
±20
V
4
A
IAR
4
A
Single Pulsed
Repetitive
EAS
52
mJ
mJ
W
Avalanche Energy
EAR
PD
52
Power Dissipation
1.14
+150
-55~+150
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
ID=250µA, VDS=0V
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
300
V
VDS=300V
1
µA
Forward
Reverse
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
±100 nA
±100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
ID=250µA
2
4
2
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS=10V, ID=4A
ꢀ
CISS
COSS
CRSS
850 pF
250 pF
200 pF
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
VDD=50V, ID=4A, IG=100µA,
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
3.2
0.64
1.6
6
nC
nC
nC
ns
ns
ns
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
VGS=10V
38
VDD=30V, ID=4A, RG=25ꢀ,
VGS=0~10V
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
11
13
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
4
A
A
V
ISM
VSD
16
IS=4A
0.1
1.48
UNISONIC TECHNOLOGIES CO., LTD
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VER.A
www.unisonic.com.tw
4N30
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-850.A
www.unisonic.com.tw
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