4N60K-MT [UTC]
N-CHANNEL JUNCTIN SILICON FET;
| 型号： | 4N60K-MT |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL JUNCTIN SILICON FET |
| 文件： | 总7页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N60K-MT
Preliminary
Power MOSFET
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N60K-MT is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
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4N60K-MT
Preliminary
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
4N60KG-TA3-T
4N60KG-TF3-T
4N60KG-TF1-T
4N60KG-TF2-T
4N60KG-TF3-T
4N60KG-TM3-T
4N60KG-TMS-T
4N60KG-TMS2-T
4N60KG-TMS4-T
4N60KG-TN3-R
4N60KG-TND-R
1
2
3
S
S
S
S
S
S
S
S
S
S
S
4N60KL-TA3-T
4N60KL-TF3-T
4N60KL-TF1-T
4N60KL-TF2-T
4N60KL-TF3-T
4N60KL-TM3-T
4N60KL-TMS-T
4N60KL-TMS2-T
4N60KL-TMS4-T
4N60KL-TN3-R
4N60KL-TND-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
TO-252D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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4N60K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
±30
4.4
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
IDM
16
A
Avalanche Energy
EAS
210
4.5
mJ
V/ns
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
106
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-251S
36
Power Dissipation
PD
W
TO-251S2/TO-251S4
TO-252/TO-252D
50
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°С
°С
°С
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.25mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
θJA
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
110
°C/W
1.18
3.47
3.4
°C/W
°C/W
°C/W
TO-220F/TO-220F1
TO-220F3
Junction to Case
θJC
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
2.50
°C/W
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4N60K-MT
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
VDS=600V, VGS=0V
DS=600V, VGS=0V, TC=125°С
VGS=30V, VDS=0V
GS= -30V, VDS=0V
600
V
10
10
μA
μA
Drain-Source Leakage Current
Gate-Source Leakage Current
V
Forward
Reverse
100 nA
-100 nA
V/°С
IGSS
V
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
ID=250μA,Referenced to 25°C
0.6
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
1.79 2.5
V
VGS=10 V, ID=2.2A
Ω
CISS
COSS
CRSS
425 575 pF
VDS = 25V, VGS = 0V,
Output Capacitance
55
6
75
11
pF
pF
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
45
49
80
43
20
5.6
4.0
ns
ns
Turn-On Rise Time
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS= 50V,ID= 1.3A,
Gate-Source Charge
QGS
QGD
VGS= 10V (Note 1, 2)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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4N60K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N60K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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4N60K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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