4N65KG-TMS2-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 4N65KG-TMS2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N65K-TA
Preliminary
Power MOSFET
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65K-TA is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is usually
used in high speed switching applications including power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* RDS(ON) < 2.8Ω @ VGS = 10 V, ID = 2.2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
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4N65K-TA
Preliminary
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
S
4N65KL-TA3-T
4N65KL-TF3-T
4N65KG-TA3-T
4N65KG-TF3-T
4N65KG-TF1-T
4N65KG-TF2-T
4N65KG-TF3T-T
4N65KG-TM3-T
4N65KG-TMS-T
4N65KG-TMS2-T
4N65KG-TMS4-T
4N65KG-TN3-R
4N65KG-TND-R
4N65KG-T2Q-T
4N65KG-T60-K
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
D
D
Tube
Tube
4N65KL-TF1-T
Tube
4N65KL-TF2-T
Tube
4N65KL-TF3T-T
4N65KL-TM3-T
Tube
Tube
4N65KL-TMS-T
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
4N65KL-TMS2-T
4N65KL-TMS4-T
4N65KL-TN3-R
Tube
Tube
Tape Reel
Tape Reel
Tube
4N65KL-TND-R
4N65KL-T2Q-T
TO-252D
TO-262
4N65KL-T60-K
Bulk
TO-126
Note: Pin Assignment: G: Gate
D: Drain
S: Source
(1) T: Tube, R: Tape Reel, K: Bulk
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF1: TO-220F2, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TMS2: TO-251S2,
4N65KL-TF3-T
(1)Packing Type
(2)Package Type
TMS4: TO-251S4, TN3: TO-252, TMD: TO-252D,
T2Q: TO-262, T60: TO-126
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
PACKAGE
MARKING
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-126
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4N65K-TA
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
650
±30
4.0
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Continuous
A
Drain Current
Pulsed (Note2)
Single Pulsed (Note3)
IDM
16
A
Avalanche Energy
EAS
150
4.5
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note4)
TO-220/TO-262
dv/dt
106
34
TO-220F
W
TO-220F1/TO-220F2
TO-220F3
36
W
Power Dissipation
PD
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
TO-126
50
W
45
W
°С
°С
°С
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=18.75mH, IAS=4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F3/TO-262
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
TO-126
Junction to Ambient
θJA
110
°C/W
89
°C/W
°C/W
°C/W
°C/W
°C/W
TO-220
1.18
3.47
3.67
3.57
TO-220F/TO-220F1
TO-220F3
TO-220F2
Junction to Case
θJC
TO-251/TO-251S
TO-251S2/ TO-251S4
TO-252/TO-252D
TO-262
2.5
°C/W
1.18
2.7
°C/W
°C/W
TO-126
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4N65K-TA
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250μA
650
V
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°С
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
3.0
5.0
2.8
V
VGS = 10 V, ID = 2.2A
Ω
CISS
COSS
CRSS
320 520 pF
VDS = 25 V, VGS = 0V,
Output Capacitance
50
5
75
10
pF
pF
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
14
5
18
nC
nC
nC
ns
ns
ns
ns
V
V
DS = 50V, ID= 1.3A,
GS = 10V (Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
2.8
48
45
74
34
Turn-On Delay Time
68
56
90
45
Turn-On Rise Time
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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4N65K-TA
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N65K-TA
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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4N65K-TA
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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