50N06L-X-TF3-T [UTC]

50 Amps, 60 Volts N-CHANNEL POWER MOSFET; 50安培， 60伏特N沟道功率MOSFET


型号：	50N06L-X-TF3-T
厂家：	Unisonic Technologies
描述：	50 Amps, 60 Volts N-CHANNEL POWER MOSFET 50安培， 60伏特N沟道功率MOSFET 晶体晶体管
文件：	总8页 (文件大小：146K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

50N06

MOSFET

50 Amps, 60 Volts

N-CHANNEL POWER MOSFET

ꢀ

DESCRIPTION

TO-220

The UTC 50N06 is three-terminal silicon device with current

conduction capability of about 50A, fast switching speed. Low

on-state resistance, breakdown voltage rating of 60V, and max

threshold voltages of 4 volt.

It is mainly suitable electronic ballast, and low power switching

mode power appliances.

TO-220F

ꢀ

FEATURES

*Pb-free plating product number: 50N06L

* R_DS(ON)= 23mΩ@V_GS= 10 V

* Ultra low gate charge ( typical 30 nC )

* Low reverse transfer Capacitance ( C_RSS= typical 80 pF )

* Fast switching capability

* 100% avalanche energy specified

* Improved dv/dt capability

ꢀ

SYMBOL

2.Drain

1.Gate

3.Source

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

50N06-TA3-T

50N06-TF3-T

50N06L-x-TA3-T

50N06L-x-TF3-T

TO-220

Tube

TO-220F

50N06L-TA3-T

(1)Packing Type

(2)Package Type

(3)Lead Plating

(1) T: Tube

(2) TA3: TO-220, TF3: TO-220F

(3) L: Lead Free Plating, Blank: Pb/Sn

www.unisonic.com.tw

1 of 8

QW-R502-088,A

50N06

MOSFET

ꢀ

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Gate to Source Voltage

V_GSS

±20

T_C= 25℃

Continuous Drain Current

I_D

T_C= 100℃

200

Drain Current Pulsed (Note 1)

Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)

Total Power Dissipation (T_C= 25℃)

Derating Factor above 25℃

I_DM

E_AS

480

V/ns

E_AR

dv/dt

130

P_D

0.9

W/℃

℃

Operation Junction Temperature

Storage Temperature

T_J

-55 ~ +150

T_STG

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

THERMAL DATA

PARAMETER

SYMBOL

θ_JC

MIN

TYP

0.5

MAX

1.15

UNIT

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

θ_CS

Thermal Resistance, Junction-to-Ambient

θ_JA

62.5

ꢀ

ELECTRICAL CHARACTERISTICS T_C= 25℃ unless otherwise specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

0.07

MAX

UNIT

Off Characteristics

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

BV_DSS

V_GS= 0 V, I_D= 250 µA

I_D= 250 µA,

△BV_DSS/△T_J

V/℃

Referenced to 25℃

V_DS= 60 V, V_GS= 0 V

V_DS= 48 V, T_C= 125℃

V_GS= 20V, V_DS= 0 V

V_GS= -20V, V_DS= 0 V

µA

Drain-Source Leakage Current

I_DSS

I_GSS

Gate-Source Leakage Current

Gate-Source Leakage Reverse

On Characteristics

100

-100

Gate Threshold Voltage

Static Drain-Source On-State

Resistance

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250 µA

V_GS= 10 V, I_D= 25 A

2.0

4.0

mΩ

Dynamic Characteristics

Input Capacitance

C_ISS

C_OSS

C_RSS

900

430

1220

550

_GS= 0 V, V_DS= 25 V

Output Capacitance

f = 1MHz

Reverse Transfer Capacitance

Dynamic Characteristics

Turn-On Delay Time

Rise Time

100

t_D(ON)

t_R

t_D(OFF)

t_F

100

200

180

160

V_DD= 30V, I_D=25 A,

R_G= 50Ω (Note 4, 5)

Turn-Off Delay Time

Fall Time

Total Gate Charge

Q_G

V_DS= 48V, V_GS= 10 V

I_D= 50A, (Note 4, 5)

Gate-Source Charge

Gate-Drain Charge (Miller Charge)

Q_GS

Q_GD

9.6

UNISONIC TECHNOLOGIES CO., LTD

2 of 8

QW-R502-088,A

www.unisonic.com.tw

50N06

MOSFET

ꢀ

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Source-Drain Diode Ratings and Characteristics

Diode Forward Voltage

V_SD

I_S

I_S= 50A, V_GS= 0 V

1.5

Integral Reverse p-n Junction Diode in the

Continuous Source Current

MOSFET

Pulsed Source Current

I_SM

200

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_S= 50A, V_GS= 0 V

dI_F/ dt = 100 A/µs

Q_RR

µC

Note 1. Repeativity rating: pulse width limited by junction temperature

2. L=5.6mH, I_AS=50A, V_DD=25V, R_G=0Ω, Starting T_J=25℃

3. I_SD≤50A, di/dt≤300A/µs, V_DD≤BV_DSS, Starting T_J=25℃

4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%

5. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

3 of 8

QW-R502-088,A

www.unisonic.com.tw

50N06

MOSFET

ꢀ

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

V_GS

(Driver)

Period

P.W.

Period

10V

V_GS=

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

(D.U.T.)

V_DD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD

4 of 8

QW-R502-088,A

www.unisonic.com.tw

50N06

MOSFET

ꢀ

TEST CIRCUITS AND WAVEFORMS (Cont.)

R_L

V_DS

90%

V_DD

V_GS

R_G

10%

V_GS

D.U.T.

10V

t_{D(ON )}

t_D(OFF)

Pulse Width ≤ 1μs

Duty Factor ≤0.1%

t_F

t_R

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

as D.U.T.

50kΩ

Q_G

12V

10V

0.3μF

0.2μF

V_DS

Q_GS

Q_GD

V_GS

DUT

V_G

1mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

R_G

V_DD

10V

D.U.T.

t_p

I_AS

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD

5 of 8

QW-R502-088,A

www.unisonic.com.tw

50N06

MOSFET

ꢀ

TYPICAL CHARACTERISTICS

Transfer Characteristics

On-State Characteristics

Top: 15V

10 V

10²

8 V

7 V

6 V

5 .5V

℃

Bottorm : 4.5V

10¹

4.5V

10¹

℃

Note:

1. V_DS=50V

2. 250µs Pulse Test

10⁰

10¹

Drain-Source Voltage, V_DS(V)

10^-1

10⁰

9 10

Gate-Source Voltage, V_GS(V)

On State Current vs. Allowable Case

Temperature

On-Resistance Variation vs. Drain Current

and Gate Voltage

2.5

10²

2.0

1.5

150℃

10¹

25℃

1.0

V_GS=10V

*Note:

1. V_GS=0V

2. 250µs Test

V_GS=20V

0.5

0.0

10⁰

0 20 40 60 80 100120140160180 200

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Source-Drain Voltage, V_SD(V)

Drain Current, I_D(A)

Capacitance Characteristics

(Non-Repetitive)

Gate Charge Characteristics

3000

C_ISS=C_GS+C_GD(C_DS=shorted)

C_OSS=C_DS+C_GD

C_RSS=C_GD

2500

V_DS=30V

C_ISS

2000

1500

*Note:

1. V_GS=0V

2. f = 1MHz

V_DS=48V

C_OSS

1000

500

*Note: I_D=50A

C_RSS

10 15

20 25 30 35 40 45

15 20 25 30 35

Total Gate Charge, Q_G(nC)

Drain-Source Voltage, V_DC(V)

UNISONIC TECHNOLOGIES CO., LTD

6 of 8

QW-R502-088,A

www.unisonic.com.tw

50N06

MOSFET

ꢀ

TYPICAL CHARACTERISTICS(Cont.)

Breakdown Voltage Variation vs. Junction

Temperature

On-Resistance Variation vs.

Junction Temperature

3.0

2.5

2.0

1.5

1.0

1.2

1.1

1.0

*Note:

1. V_GS=0V

2. I_D=250µA

*Note:

1. V_GS=10V

2. I_D=25A

0.9

0.8

0.5

0.0

200

-100 -50

50 100 150

-50

100

150

Junction Temperature, T_J(℃)

Maximum Drain Current vs. Case Temperature

Maximum Safe Operating

10³

Operation in This

Area by R_{DS (on)}

100µs

10²

10¹

1ms

10ms

*Note:

10⁰

1. T_c=25℃

2. T_J=150℃

3.Single Pulse

10^-1

10¹

10⁰

10¹

10²

150

100

125

Drain-Source Voltage, V_DS(V)

Case Temperature, T_C(℃)

Transient Thermal

Response Curve

10⁰

D=0.5

0.2

0.1

0.05

10^-1

0.02

*Note:

1. _θJC(t ) = 1.42℃/W Max.

2. Duty Factor , D=t1/t2

0.01

3. T_J-T_C=P_DM×Z_θJC(t)

Single pulse

10^-2

10⁰10¹

10^-510^-410^-310^-210^-1

Square Wave Pulse Duration, t₁(sec)

UNISONIC TECHNOLOGIES CO., LTD

7 of 8

QW-R502-088,A

www.unisonic.com.tw

50N06

MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

8 of 8

QW-R502-088,A

www.unisonic.com.tw

50N06L-X-TF3-T [UTC]

相关型号：

50N06_11

50N06_13

50N1372

50N1386

50N1387

50N1388

50N1391

50N60G-TM3-T

50N60G-TND-T

50N60L-TM3-T

50N60L-TND-T

50NA0.47MFA5X11