5302DL-AA3-R [UTC]

Power Bipolar Transistor;
5302DL-AA3-R
型号: 5302DL-AA3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Power Bipolar Transistor

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UNISONIC TECHNOLOGIES CO., LTD  
5302D  
NPN SILICON TRANSISTOR  
HIGH VOLTAGE NPN  
TRANSISTOR WITH DIODE  
DESCRIPTION  
The UTC 5302D are series of NPN silicon planar transistor  
with diode and its suited to be used in power amplifier applications.  
FEATURES  
* Internal free-wheeling diode  
* Makes efficient anti-saturation operation  
* Low variable storage-time spread  
* Low base drive  
* Very suitable for half bridge light ballast application  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
B
E
E
E
B
B
B
2
3
E
E
B
B
B
E
E
E
SOT-223  
TO-126  
TO-92  
C
C
C
C
C
C
C
C
Tape Reel  
Bulk  
5302DL-AA3-R  
5302DL-T60-K  
5302DL-T92-B  
5302DL-T92-K  
5302DL-T92-R  
5302DL-TM3-T  
5302DL-TN3-R  
5302DL-TN3-T  
5302DG-AA3-R  
5302DG-T60-K  
5302DG-T92-B  
5302DG-T92-K  
5302DG-T92-R  
5302DG-TM3-T  
5302DG-TN3-R  
5302DG-TN3-T  
Tape Box  
Bulk  
TO-92  
TO-92  
Tape Reel  
Tube  
TO-251  
TO-252  
TO-252  
Tape Reel  
Tube  
5302DL-T60-T  
(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel  
(2) T60: TO-126, T92: TO-92, TM3: TO-251,  
TN3: TO-252, AA3: SOT-223  
(1)Packing Type  
(2)Package Type  
(3)Lead Free  
(3) G: Halogen Free, L: Lead Free  
www.unisonic.com.tw  
1 of 3  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R213-018.G  
5302D  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
800  
400  
10  
V
V
V
A
2
Collector Peak Current (tP<5ms)  
Base Current  
ICM  
IB  
4
1
A
A
A
Base Peak Current (tP<5ms)  
IBM  
2
12.5  
1.6  
25  
1
TO-126  
TO-92  
W
Power Dissipation (TC25°С)  
PD  
TO-251/ TO-252  
SOT-223  
Junction Temperature  
Storage Temperature  
TJ  
+150  
°С  
°С  
TSTG  
-65 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
122  
160  
100  
175  
10  
UNIT  
TO-126  
TO-92  
Junction to Ambient  
Junction to Case  
θJA  
°С/W  
TO-251/ TO-252  
SOT-223  
TO-126  
TO-92  
80  
θJC  
°С/W  
TO-251/ TO-252  
SOT-223  
5
125  
ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
BVCEO IC=10mA, IE=0 (Note)  
BVCBO IC=1mA, IB=0  
400  
800  
10  
V
V
BVEBO IE=1mA, IC=0  
V
ICBO  
IEBO  
VCB=800V, IE=0  
VEB=9V, IC=0  
1
1
μA  
μA  
Emitter Cutoff Current  
ON CHARACTERISTICS  
hFE1  
hFE2  
hFE3  
VCE=5V, IC=10mA  
VCE=5V, IC=400mA  
VCE=5V, IC=1A  
10  
10  
5
DC Current Gain  
40  
VCE(SAT1) IC=0.5A, IB=0.1A (Note)  
VCE(SAT2) IC=1A, IB=0.25A (Note)  
VBE(SAT1) IC=0.5A, IB=0.1A (Note)  
VBE(SAT2) IC=1A, IB=0.25A (Note)  
0.5  
1.5  
1.1  
1.2  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
1.1  
SWITCHING CHARACTERISTICS  
Turn On Time  
tON  
tF  
0.15  
0.2  
0.3  
0.4  
0.9  
μS  
μS  
μS  
VCC=250V, IC=1A,  
IB1=IB2=0.2A, tP=25uS  
Duty Cycle<1%  
Fall Time  
Storage Time  
tSTG  
0.5  
DIODE  
Forward Voltage Drop  
Fall Time  
VF  
tF  
IC=1A  
IC=1A  
1.4  
V
800  
μS  
Note: Pulsed duration = 300μS, Duty cycle2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R213-018. G  
www.unisonic.com.tw  
5302D  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Collector Current VS. BVCEO  
Collector Current VS. BVCBO  
14  
12  
1400  
1200  
1000  
10  
8
800  
6
4
2
0
600  
400  
200  
0
0
600  
200  
500  
400  
100  
300  
400  
0
200  
600  
800  
1000  
Collector-Emitter Breakdown Voltage ,BVCEO (V)  
Collector-Base Breakdown Voltage ,BVCBO (V)  
Emitter Current VS. BVEBO  
140  
Current Gain vs. Collector Current  
100  
120  
50  
40  
TC=100°C  
TC=25°C  
100  
80  
30  
20  
TC=-40°C  
60  
40  
20  
0
10  
7
5
Common emitter  
VCE=5V  
1
0.01  
20  
0
2
4
6
8
10 12 14 16 18  
0.05  
0.1  
0.2 0.5 1 2  
10  
Emitter-Base Breakdown Voltage ,BVEBO (V)  
Collector Current, IC (A)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R213-018. G  
www.unisonic.com.tw  

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