5302 [UTC]
HIGH VOLTAGE NPN TRANSISTOR; 高压NPN晶体管
| 型号： | 5302 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE NPN TRANSISTOR |
| 文件： | 总4页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5302
NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
TRANSISTOR
DESCRIPTION
1
The UTC 5302 is a NPN silicon planar transistor and suited to
TO-251
be used in power amplifier applications.
FEATURES
* Makes efficient anti-saturation operation
* Low variable storage-time spread
* Low base drive
* Very suitable for half bridge light ballast application
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
TO-251
Lead Free
Halogen Free
5302G-TM3-T
1
2
3
5302L-TM3-T
B
C
E
Tube
Note: Pin Assignment: B: Base C: Collector E: Emitter
5302L-TM3-T
(1)Packing Type
(1) T: Tube
(2)Package Type
(3)Lead Free
(2) TM3: TO-251
(3) G: Halogen Free, L: Lead Free
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Copyright © 2010 Unisonic Technologies Co., Ltd
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5302
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
800
400
10
V
V
V
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
2
Collector Peak Current (tp<5ms)
Base Current
ICM
IB
4
1
A
A
Base Peak Current (tp<5ms)
Power Dissipation (TC≤25°С)
Junction Temperature
Storage Temperature
IBM
PD
2
25
A
W
TJ
+150
°С
°С
TSTG
-65 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
100
5
θJC
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5302
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BVCEO IC=10mA, IE=0 (Note)
BVCBO IC=1mA, IB=0
400
800
10
V
V
V
BVEBO IE=1mA, IC=0
ICBO
IEBO
VCB=800V, IE=0
VEB=9V, IC=0
1
1
μA
μA
Emitter Cutoff Current
ON CHARACTERISTICS
hFE1
hFE2
hFE3
VCE=5V, IC=10mA
VCE=5V, IC=400mA
VCE=5V, IC=1A
10
10
5
DC Current Gain
30
VCE(SAT1) IC=0.5A, IB=0.1A (Note)
VCE(SAT2) IC=1A, IB=0.25A (Note)
VBE(SAT1) IC=0.5A, IB=0.1A (Note)
VBE(SAT2) IC=1A, IB=0.25A (Note)
0.5
1.5
1.1
1.2
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
1.1
SWITCHING CHARACTERISTICS
Turn On Time
tON
tF
VCC=250V, IC=1A,
IB1=IB2=0.2A, tP=25uS
Duty Cycle<1%
0.15
0.2
0.3
0.4
0.9
μS
μS
μS
Fall Time
Storage Time
tSTG
0.5
Note: Pulsed duration = 300μS, Duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
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5302
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current VS. BVCEO
Collector Current VS. BVCBO
14
12
1400
1200
1000
10
8
800
6
4
2
0
600
400
200
0
0
600
200
500
400
100
300
400
0
200
600
800
1000
Collector-Emitter Breakdown Voltage ,BVCEO (V)
Collector-Base Breakdown Voltage ,BVCBO (V)
Emitter Current VS. BVEBO
140
120
100
80
60
40
20
0
8
10
20
0
2
4
6
12 14 16 18
Emitter-Base Breakdown Voltage ,BVEBO (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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