5303D_15 [UTC]
HIGH VOLTAGE NPN TRANSISTOR;
| 型号： | 5303D_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE NPN TRANSISTOR 高压 |
| 文件： | 总3页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5303D
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
TRANSISTOR WITH DIODE
DESCRIPTION
The UTC 5303D is a high voltage silicon triple diffused type
1
NPN transistor with diode. This chip is built in free-wheeling
diode , makeing efficient anti-saturation operation.
TO-251
FEATURES
* Not Necessary to Interest an hFE Value
* Need Very Low Base Drive
* Can Be Used In Half Bridge Light Ballast Application
INTERNAL SCHEMATIC DIAGRAM
(2) C
Lead-free:
5303DL
Halogen-free:5303DG
(1) B
(3) E
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-251
Packing
Tube
Normal
Lead Free Plating
5303DL-TM3-T
Halogen Free
1
2
2
5303D-TM3-T
5303DG-TM3-T
B
C
E
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R223-004.a
5303D
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta = 25°С,unless otherwise noted)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
700
Collector-Emitter Voltage
Emitter-Base Voltage
400
V
10
V
Collector Current
2
A
Collector Peak Current (tp<5ms)
Base Current
ICM
4
A
IB
1
2
A
Base Peak Current (tp<5ms)
Collector Dissipation (TC≤25°С)
Maximum Operating Junction Temperature
Storage Temperature Range
IBM
A
PC
25
W
°С
°С
TJ
+150
-65~+150
TSTG
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
100
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
θJC
6.25
ELECTRICAL CHARACTERISTICS (Ta = 25°С,unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Voltage
BVCBO IC = 1mA, IB = 0
BVCEO IC = 10mA, IE = 0
BVEBO IE = 1mA, IC = 0
700
400
10
V
V
Collector-Emitter Breakdown Voltage (Note)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V
ICBO
IEBO
VCB = 700V, IE = 0
VEB = 9V, IC = 0
1
1
µA
µA
Emitter Cutoff Current
ON CHARACTERISTICS
hFE1
hFE2
hFE3
VCE =5V, IC =10mA
VCE =5V, IC =400mA
VCE =5V, IC =1A
10
10
5
DC Current Gain
30
VCE(SAT1) IC =0.5A, IB =0.1A
VCE(SAT2) IC =1A, IB =0.25A
VBE(SAT) IC =0.5A, IB =0.1A
VBE(SAT2) IC =1A, IB =0.25A
0.5
1.5
1.1
1.2
V
V
V
V
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
1.1
SWITCHING CHARACTERISTICS
Turn On Time
tON
tSTG
tF
VCC =250V, IC =1A,
IB1=IB2 =0.2A, tp =25uS Duty
Cycle<1%
0.15 0.3
µS
µS
µS
Storage Time
0.5
0.2
0.9
0.4
Fall Time
Diode
Forward Voltage Drop
VF
tF
IC =1A
IC =1A
1.4
V
Fall Time
800
µS
Note: Pulsed duration = 300µS, duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
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www.unisonic.com.tw
5303D
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R223-004.a
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