5N50K-MT [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 5N50K-MT |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5N50K-MT
Power MOSFET
5A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N50K-MT is an N-channel power MOSFET
adopting UTC’s advanced technology to provide customers
with DMOS, planar stripe technology. This technology is
designed to meet the requirements of the minimum on-state
resistance and perfect switching performance. It also can
withstand high energy pulse in the avalanche and
communication mode.
The UTC 5N50K-MT can be used in applications, such as
active power factor correction, high efficiency switched mode
power supplies, electronic lamp ballasts based on half bridge
topology.
FEATURES
* RDS(ON) < 1.4Ω @ VGS=10V, ID=2.5A
* 100% avalanche tested
* High switching speed
SYMBOL
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5N50K-MT
Preliminary
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
5N50KG-TA3-T
5N50KG-TF3-T
5N50KG-TF1-T
5N50KG-TF2-T
5N50KG-TF3-T
5N50KG-TM3-T
5N50KG-TMS-T
5N50KG-TMS2-T
5N50KG-TMS4-T
5N50KG-TN3-R
5N50KG-TND-R
1
2
3
S
S
S
S
S
S
S
S
S
S
S
5N50KL-TA3-T
5N50KL-TF3-T
5N50KL-TF1-T
5N50KL-TF2-T
5N50KL-TF3-T
5N50KL-TM3-T
5N50KL-TMS-T
5N50KL-TMS2-T
5N50KL-TMS4-T
5N50KL-TN3-R
5N50KL-TND-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
TO-252D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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5N50K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
500
±30
5
V
Continuous
A
Drain Current
Pulsed (Note 2)
IDM
20
A
Avalanche Current (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IAR
5
A
EAS
150
7.3
4.5
78
mJ
mJ
V/ns
W
Avalanche Energy
EAR
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
TO-220F/TO-220F1
TO-220F3
36
29
W
W
Power Dissipation
PD
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
54
W
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 12mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
θJA
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
110
°C/W
1.16
4.2
°C/W
°C/W
°C/W
TO-220F/TO-220F1
TO-220F3
Junction to Case
θJC
TO-220F2
4.18
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
2.3
°C/W
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5N50K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
BVDSS
ID=250µA, VGS=0V
500
V
△
△
TJ
BVDSS
/
Reference to 25°C, ID=250µA
VDS=500V, VGS=0V
0.5
V/°C
1
Drain-Source Leakage Current
IDSS
µA
VDS=400V, TC=125°C
VGS=30V, VDS=0V
10
Forward
Gate- Source Leakage Current
Reverse
100 nA
-100 nA
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2.5A
2.0
4.0
V
1.23 1.4
Ω
CISS
COSS
CRSS
525 625
pF
pF
pF
VGS=0V, VDS=25V,
f=1.0MHz
Output Capacitance
64
6
105
20
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
46
50
54
44
60
70
ns
ns
VDD=30V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
130
105
ns
ns
Total Gate Charge
QG
21.6 24
5.6
nC
nC
nC
VGS=10V, VDS=50V,
ID=1.3A (Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
5.5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
5
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
trr
IS=5A, VGS=0V
1.4
263
V
IS=5A, VGS=0V,
dIF/dt=100A/µs (Note 1)
ns
µC
Reverse Recovery Charge
QRR
1.9
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
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5N50K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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5N50K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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5N50K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
0
50
0
0
100 200 300 400 500 600
0
1
2
3
4
5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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