5N60L-K08-5060-R [UTC]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | 5N60L-K08-5060-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总7页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5N60
Power MOSFET
5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) < 2.2Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
5N60L-TA3-T
5N60L-TF1-T
5N60L-TF2-T
5N60L-TF3-T
5N60L-TF3T-T
5N60L-TM3-T
5N60L-TN3-T
5N60L-TN3-R
5N60L-K08-5060-R
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
S
4
-
5
-
6
-
7
-
8
-
5N60G-TA3-T
5N60G-TF1-T
5N60G-TF2-T
5N60G-TF3-T
5N60G-TF3T-T
5N60G-TM3-T
5N60G-TN3-T
5N60G-TN3-R
5N60G-K08-5060-R
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-251
G
G
G
G
G
G
G
G
S
D
D
D
D
D
D
D
D
S
Tube
Tube
-
-
-
-
-
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
TO-252
-
-
-
-
-
Tube
TO-252
-
-
-
-
-
Tape Reel
Tape Reel
DFN-8(5×6)
G
D
D
D
D
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-065.K
5N60
Power MOSFET
PIN CONFIGURATION
DFN-8(5×6)
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5N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
600
±30
5
V
V
A
A
A
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
ID
5
IDM
20
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
210
10
Avalanche Energy
mJ
EAR
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.5
100
V/ns
TO-220F/TO-220F1
TO-220F3
36
Power Dissipation
PD
W
TO-220F2
38
54
TO-251 / TO-252
DFN-8(5×6)
28
Junction Temperature
Operation Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F1/ TO-220F2
TO-220F3
Junction to Ambient
Junction to Case
θJA
TO-251 / TO-252
DFN-8(5×6)
160
75
TO-220
1.25
TO-220F/TO-220F1
TO-220F3
3.47
θJC
°C/W
TO-220F2
3.28
2.3
TO-251 / TO-252
DFN-8(5×6)
4.46
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5N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS =0V, ID = 250μA
600
V
VDS =600V, VGS = 0V
VGS =30V, VDS = 0V
1
μA
Forward
Reverse
100
-100
Gate-Source Leakage Current
IGSS
nA
VGS =-30V, VDS = 0V
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
ID =250μA, Referenced to 25℃
0.6
V/°C
VGS(TH)
RDS(ON)
VDS =VGS, ID = 250μA
2.0
4.0
V
VGS =10V, ID = 2.5A
1.8 2.2
Ω
CISS
COSS
CRSS
515 670 pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
55
72
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
6.5 8.5
tD(ON)
tR
tD(OFF)
tF
10
42
38
30
90
85
ns
ns
ns
Turn-On Rise Time
VDD = 300V, ID =5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
46 100 ns
Total Gate Charge
QG
15
2.5
6.6
19
nC
nC
nC
VDS = 480 V, ID = 5A,
Gate-Source Charge
QGS
QGD
VGS = 10 V (Note 1, 2)
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 5A
1.4
5
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
A
Reverse Recovery Time
trr
300
2.2
ns
VGS = 0 V, IS = 5A,
dIF / dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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5N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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5N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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5N60
Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-Region Characteristics
VGS
Top:
Bottorm:4.5V
5.0V
101
101
100
10-1
5V
100
25°C
10-1
*Notes:
*Notes:
1. 250µs Pulse Test
2. TC=25°C
4.5V
1. VDS=40V
2. 250µs Pulse Test
10-2
10-1
100
101
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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