5N65Z [UTC]
5A, 650V N-CHANNEL POWER MOSFET;
| 型号： | 5N65Z |
| 厂家： | 
Unisonic Technologies |
| 描述： | 5A, 650V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5N65Z
Preliminary
Power MOSFET
5A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N65Z is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high
speed switching applications at power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.4Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Tube
Lead Free
Halogen Free
5N65ZG-TF1-T
1
2
3
5N65ZL-TF1-T
TO-220F1
G
D
S
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-910.a
5N65Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
650
V
V
A
A
A
±20
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
5
ID
5
20
IDM
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
210
Avalanche Energy
mJ
EAR
10
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
dv/dt
PD
4.5
V/ns
W
36
Junction Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°C
Operation Temperature
Storage Temperature
TOPR
TSTG
°C
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
3.47
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5N65Z
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS =0V, ID = 250μA
650
V
VDS =650V, VGS = 0V
VGS =20V, VDS = 0V
1
μA
Forward
Reverse
+5
-5
Gate-Source Leakage Current
IGSS
μA
VGS =-20V, VDS = 0V
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
ID =250μA, Referenced to 25°C
0.6
V/°C
VGS(TH)
RDS(ON)
VDS =VGS, ID = 250μA
2.0
4.0
V
VGS =10V, ID = 2.5A
2.0 2.4
Ω
CISS
COSS
CRSS
515 670 pF
55 72 pF
6.5 8.5 pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
10
42
38
30
90
85
ns
ns
ns
Turn-On Rise Time
VDD = 325V, ID =5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
46 100 ns
Total Gate Charge
QG
15
2.5
6.6
19
nC
nC
nC
VDS = 520 V, ID = 5A,
Gate-Source Charge
QGS
QGD
VGS = 10 V (Note 1, 2)
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 5A
1.4
5
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
A
Reverse Recovery Time
trr
300
2.2
ns
VGS = 0 V, IS =5A,
dIF / dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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5N65Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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5N65Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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5N65Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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