5N70KL-TMS4-T [UTC]

N-CHANNEL POWER MOSFET;
5N70KL-TMS4-T
型号: 5N70KL-TMS4-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD  
5N70K-MT  
Power MOSFET  
5A, 700V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 5N70K-MT is a high voltage power MOSFET designed  
to have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and high rugged avalanche  
characteristics. This power MOSFET is usually used in high speed  
switching applications at power supplies, PWM motor controls, high  
efficient DC to DC converters and bridge circuits.  
FEATURES  
* RDS(ON) < 2.4@ VGS =10V, ID = 2.5 A  
* Fast Switching Capability  
* Improved dv/dt Capability, High Ruggedness  
SYMBOL  
www.unisonic.com.tw  
1 of 7  
Copyright © 2015 Unisonic Technologies Co., Ltd  
QW-R502-B33.D  
5N70K-MT  
Power MOSFET  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
5N70KG-TA3-T  
5N70KG-TF3-T  
5N70KG-TF1-T  
5N70KG-TF2-T  
5N70KG-TF3-T  
5N70KG-TM3-T  
5N70KG-TMS-T  
5N70KG-TMS2-T  
5N70KG-TMS4-T  
5N70KG-TN3-R  
5N70KG-TND-R  
1
2
3
S
S
S
S
S
S
S
S
S
S
S
5N70KL-TA3-T  
5N70KL-TF3-T  
5N70KL-TF1-T  
5N70KL-TF2-T  
5N70KL-TF3-T  
5N70KL-TM3-T  
5N70KL-TMS-T  
5N70KL-TMS2-T  
5N70KL-TMS4-T  
5N70KL-TN3-R  
5N70KL-TND-R  
TO-220  
TO-220F  
TO-220F1  
TO-220F2  
TO-220F3  
TO-251  
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
Tube  
Tube  
Tube  
Tube  
Tube  
Tube  
TO-251S  
TO-251S2  
TO-251S4  
TO-252  
Tube  
Tube  
Tube  
Tape Reel  
Tape Reel  
TO-252D  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
MARKING  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 7  
QW-R502-B33.D  
www.unisonic.com.tw  
5N70K-MT  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
IAR  
RATINGS  
UNIT  
Drain-Source Voltage  
700  
±30  
5
V
V
A
A
A
Gate-Source Voltage  
Avalanche Current (Note 2)  
Continuous Drain Current  
Pulsed Drain Current (Note 2)  
ID  
5
IDM  
20  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
EAS  
150  
10  
Avalanche Energy  
mJ  
EAR  
Peak Diode Recovery dv/dt (Note 4)  
TO-220  
dv/dt  
4.5  
108  
V/ns  
W
TO-220F/TO-220F1  
TO-220F3  
36  
38  
W
W
Power Dissipation  
PD  
TO-220F2  
TO-251/TO-251S  
TO-251S2/TO-251S4  
TO-252/TO-252D  
54  
W
Junction Temperature  
Operation Temperature  
Storage Temperature  
TJ  
+150  
°C  
°C  
°C  
TOPR  
TSTG  
-55~+150  
-55~+150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Pulse width limited by TJ(MAX)  
3. L=12mH, IAS=5A, VDD=50V, RG=25 , Starting TJ = 25°C  
4. ISD5A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
TO-220/TO-220F  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
TO-220F1/TO-220F2  
TO-220F3  
Junction to Ambient  
θJA  
TO-251/TO-251S  
TO-251S2/TO-251S4  
TO-252/TO-252D  
TO-220  
110  
°C/W  
1.15  
3.47  
3.28  
°C/W  
°C/W  
°C/W  
TO-220F/TO-220F1  
TO-220F3  
Junction to Case  
θJC  
TO-220F2  
TO-251/TO-251S  
TO-251S2/TO-251S4  
TO-252/TO-252D  
2.30  
°C/W  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 7  
QW-R502-B33.D  
www.unisonic.com.tw  
5N70K-MT  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS =0V, ID = 250μA  
700  
V
VDS =700V, VGS = 0V  
VGS =30V, VDS = 0V  
VGS =-30V, VDS = 0V  
1
μA  
Forward  
Reverse  
100  
-100  
Gate-Source Leakage Current  
IGSS  
nA  
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID =250μA, Referenced to 25°C  
0.6  
V/°C  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VGS(TH)  
RDS(ON)  
VDS =VGS, ID = 250μA  
2.0  
4.0  
V
VGS =10V, ID = 2.5A  
1.86 2.4  
CISS  
COSS  
CRSS  
515 670 pF  
55 72 pF  
6.5 8.5 pF  
VDS = 25V, VGS = 0V,  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
50  
40  
ns  
ns  
Turn-On Rise Time  
VDD = 30V, ID =0.5A,  
RG = 25(Note 1, 2)  
Turn-Off Delay Time  
180  
52  
ns  
Turn-Off Fall Time  
ns  
Total Gate Charge  
QG  
18  
23  
nC  
nC  
nC  
V
V
DS = 50 V, ID = 1.3A,  
GS = 10 V (Note 1, 2)  
Gate-Source Charge  
QGS  
QGD  
6.7  
3.9  
Gate-Drain Charge  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS = 0 V, IS = 5A  
1.4  
5
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
20  
A
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 7  
QW-R502-B33.D  
www.unisonic.com.tw  
5N70K-MT  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
(D.U.T.)  
VDD  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 7  
QW-R502-B33.D  
www.unisonic.com.tw  
5N70K-MT  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS (Cont.)  
Switching Test Circuit  
Switching Waveforms  
Gate Charge Test Circuit  
Gate Charge Waveform  
L
VDS  
BVDSS  
IAS  
RD  
VDD  
ID(t)  
VDS(t)  
VDD  
10V  
D.U.T.  
tp  
Time  
tp  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 7  
QW-R502-B33.D  
www.unisonic.com.tw  
5N70K-MT  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 7  
QW-R502-B33.D  
www.unisonic.com.tw  

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