5N90G-TF3-T [UTC]
5A, 900V N-CHANNEL POWER MOSFET; 5A ， 900V N沟道功率MOSFET
| 型号： | 5N90G-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 5A, 900V N-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5N90
Preliminary
Power MOSFET
5A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N90 is a N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology specialized in allowing a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The UTC 5N90 is universally applied in high efficiency switch mode
power supply.
FEATURES
* RDS(on)=2.8Ω @VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
5N90L-TA3-T
5N90L-TF3-T
5N90L-T3P-T
5N90G-TA3-T
5N90G-TF3-T
5N90G-T3P-T
TO-220
TO-220F
TO-3P
G
G
G
Tube
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
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5N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
900
±30
5
V
V
Continuous
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
12
A
EAS
660
5.1
mJ
mJ
V/ns
Avalanche Energy
EAR
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.0
125
38
Power Dissipation
TO-220F
TO-3P
PD
W
240
+150
-55~+150
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=52.8mH, IAS=5A, VDD= 50V, RG=25ꢀ, Starting TJ=25°C
4. ISD ≤5.4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
TO-220/ TO-220F
SYMBOL
RATINGS
62.5
40
UNIT
°C/W
Junction to Ambient
θJA
TO-3P
TO-220
TO-220F
TO-3P
1
Junction to Case
θJC
3.25
0.52
°C/W
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5N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
900
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
1.0
VDS=900V, VGS=0V
10
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
IGSS
VDS=720V, TC=125°C
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
100
100
-100
µA
Forward
Reverse
nA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
2.8
V
ꢀ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=10V, ID=2.5A
2.25
4.0
gFS
VDS=50V, ID=2.5A (Note 1)
CISS
COSS
CRSS
1200 1550
pF
pF
pF
Output Capacitance
VDS=25V,VGS=0V,f=1.0MHz
110
13
145
17
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
31
7.2
15
28
65
65
50
40
nC
nC
nC
ns
ns
ns
ns
VDS=720V, VGS=10V, ID=5A
(Note 1,2)
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
65
Turn-ON Rise Time
140
140
110
VDD=450V, ID=5A, RG=25ꢀ
(Note 1,2)
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
5
A
A
12
1.4
IS =5A, VGS=0V
V
610
ns
μC
VGS=0V, IS=5.4A,
dIF/dt=100A/μs (Note 1)
QRR
5.26
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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5N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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5N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
Unclamped Inductive Switching Waveforms
tP
Unclamped Inductive Switching Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-499.c
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