60N06-TA3-T [UTC]
60 Amps, 60 Volts N-CHANNEL POWER MOSFET; 60安培， 60伏特N沟道功率MOSFET
| 型号： | 60N06-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60 Amps, 60 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
60N06
Power MOSFET
60 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 60N06 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
FEATURES
* RDS(ON) = 18mΩ @VGS = 10 V
* Ultra low gate charge ( typical 39 nC )
* Fast switching capability
*Pb-free plating product number: 60N06L
* Low reverse transfer Capacitance (CRSS= typical 115 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Normal
Lead Free Plating
60N06L-TA3-T
1
2
3
60N06-TA3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain S: Source
60N06L-TA3-T
(1)Packing Type
(2)Package Type
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
1 of 8
Copyright © 2007 Unisonic Technologies Co., Ltd.
QW-R502-121.A
60N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
60
±20
60
VGS
V
TC = 25℃
A
Continuous Drain Current
Drain Current Pulsed (Note 1)
Avalanche Energy
ID
TC = 100℃
39
A
IDM
EAS
EAR
PD
120
A
Single Pulsed (Note 2)
Repetitive (Note 1)
1000
180
mJ
mJ
W
℃
℃
Total Power Dissipation
Junction Temperature
Storage Temperature
120
TJ
+175
-55 ~ +175
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
62.5
1.25
UNIT
℃/W
℃/W
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
θJC
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
60
V
1
µA
nA
Forward
100
Gate-Source Leakage Current
IGSS
Reverse
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
2.0
4.0
18
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
14
mΩ
CISS
COSS
CRSS
2000
400
pF
pF
pF
VGS = 0V, VDS =25V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
115
tD(ON)
tR
tD(OFF)
tF
12
11
25
15
39
12
10
30
30
50
30
60
ns
ns
Rise Time
VDD=30V, ID=60A, RL=0.5Ω,
VGS=10V (Note 4, 5)
Turn-Off Delay Time
ns
Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS = 30V, VGS = 10 V
Gate-Source Charge
QGS
QGD
ID = 60A (Note 4, 5)
Gate-Drain Charge (Miller Charge)
UNISONIC TECHNOLOGIES CO., LTD
2 of 8
QW-R502-121.A
www.unisonic.com.tw
60N06
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
IS
VGS = 0 V, IS = 60A
1.6
60
V
A
ISM
tRR
QRR
120
IS = 60A, VGS = 0 V,
dIF / dt = 100 A/µs
60
ns
3.4
µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.61mH, IAS=60A, RG=20Ω, Starting TJ=25℃
3. ISD≤60A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
5. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
3 of 8
QW-R502-121.A
www.unisonic.com.tw
60N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
4 of 8
QW-R502-121.A
www.unisonic.com.tw
60N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 8
QW-R502-121.A
www.unisonic.com.tw
60N06
Power MOSFET
TYPICAL CHARACTERISTICS
Capacitance
Gate Charge
3000
2500
2000
1500
10
8
VGS = 10V
ID = 60A
Ciss
6
4
2
0
1000
500
Coss
Crss
0
0
10
20
30
40
0
10
20
30
40
Drain-to-Source Voltage, VDS (V)
Total Gate Charge, QG (nC)
UNISONIC TECHNOLOGIES CO., LTD
6 of 8
QW-R502-121.A
www.unisonic.com.tw
60N06
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
200
100
70
60
50
10μs
Limited
by RDS(on)
100μs
1ms
10
40
30
10ms
100ms
dc
1
20
10
TJ = 25℃
Single Pulse
0.1
0
0
20 40 60 80 100 120 140 160 180
0.1
1
10
100
Drain-to-Source Voltage, VDS (V)
Case Temperature, TC (℃)
Normalized Thermal Transient Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.02
0.05
0.
01
10-5
10-4
10-3
10-2
10-1
1
3
Square Wave Pulse Duration (sec)
UNISONIC TECHNOLOGIES CO., LTD
7 of 8
QW-R502-121.A
www.unisonic.com.tw
60N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
8 of 8
QW-R502-121.A
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明