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75N75-TA3-T [UTC]

75Amps, 75Volts N-CHANNEL POWER MOSTFET; 75安培， 75Volts N沟道功率MOSTFET
75N75-TA3-T
型号： 75N75-TA3-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

75Amps, 75Volts N-CHANNEL POWER MOSTFET
75安培， 75Volts N沟道功率MOSTFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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UNISONIC TECHNOLOGIES CO., LTD  
75N75  
Power MOSFET  
75Amps, 75Volts  
N-CHANNEL POWER MOSTFET  
1
TO- 251  
TO-252  
1
ꢀ
DESCRIPTION  
The UTC 75N75 is n-channel enhancement mode power field  
effect transistors with stable off-state characteristics, fast  
switching speed, low thermal resistance, usually used at telecom  
and computer application.  
1
TO-220  
ꢀ
FEATURES  
1
* RDS(ON) = 12.5mΩ @VGS = 10 V  
* Ultra low gate charge ( typical 90 nC )  
* Fast switching capability  
TO-220F  
*Pb-free plating product number: 75N75L  
* Avalanche energy Specified  
* Improved dv/dt capability, high ruggedness  
ꢀ
SYMBOL  
2.Drain  
1.Gate  
3.Source  
ꢀ ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
2
D
D
D
D
D
3
S
S
S
S
S
75N75-TA3-T  
75N75-TF3-T  
75N75-TM3-T  
75N75-TN3-R  
75N75-TN3-T  
75N75L-TA3-T  
75N75L-TF3-T  
75N75L-TM3-T  
75N75L-TN3-R  
75N75L-TN3-T  
TO-220  
TO-220F  
TO-251  
TO-252  
TO-252  
Tube  
Tube  
G
G
G
G
G
Tube  
Tape Reel  
Tube  
Note: Pin Assignment: G: Gate D: Drain S: Source  
75N75L-TA3-T  
(1)Packing Type  
(2)Package Type  
(1) T: Tube, R: Tape Reel  
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,  
TN 3: TO-252  
(3)Lead Plating  
(3) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
1 of 8  
Copyright © 2005 Unisonic Technologies Co., Ltd.  
QW-R502-097,A  
75N75  
Power MOSFET  
ꢀ
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
UNIT  
V
Drain to Source Voltage  
75  
75  
TC = 25℃  
A
Continuous Drain Current  
ID  
TC = 100℃  
56  
A
Drain Current Pulsed (Note 1)  
Gate to Source Voltage  
IDM  
VGS  
EAS  
300  
±20  
A
V
Single Pulsed (Note 2)  
Repetitive (Note 1)  
900  
300  
mJ  
mJ  
V/ns  
W
Avalanche Energy  
EAR  
dv/dt  
Peak Diode Recovery dv/dt (Note 3)  
Total Power Dissipation  
15  
TC = 25℃  
220  
PD  
Derating above 25℃  
1.4  
W/℃  
℃
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ꢀ
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
0.5  
MAX  
62.5  
0.8  
UNIT  
℃/W  
℃/W  
℃/W  
Thermal Resistance Junction-Ambient  
Thermal Resistance Junction-Case  
Thermal Resistance Case-Sink  
θJC  
θCS  
ꢀ
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
0.08  
MAX  
UNIT  
Off Characteristics  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature  
Coefficient  
BVDSS  
VGS = 0 V, ID = 250 µA  
ID = 1mA,  
Referenced to 25℃  
VDS = 75 V, VGS = 0 V  
75  
V
V/℃  
µA  
△BVDSS/△TJ  
20  
Drain-Source Leakage Current  
IDSS  
V
DS = 75 V, VGS = 0 V,  
250  
µA  
TJ = 150℃  
Gate-Source Leakage Current  
Gate-Source Leakage Reverse  
On Characteristics  
VGS = 20V, VDS = 0 V  
VGS = -20V, VDS = 0 V  
100  
nA  
nA  
IGSS  
-100  
Gate Threshold Voltage  
Static Drain-Source On-State  
Resistance  
VGS(TH)  
RDS(ON)  
VDS = VGS, ID = 250 µA  
VGS = 10 V, ID = 48 A  
2.0  
4.0  
15  
V
12.5  
mΩ  
Dynamic Characteristics  
Input Capacitance  
CISS  
COSS  
CRSS  
3300  
530  
80  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics  
Turn-On Delay Time  
Rise Time  
tD(ON)  
tR  
tD(OFF)  
tF  
12  
79  
80  
52  
90  
20  
30  
ns  
ns  
VDD = 38V, ID =48A,  
VGS=10V, (Note 4, 5)  
Turn-Off Delay Time  
Fall Time  
ns  
ns  
Total Gate Charge  
QG  
140  
35  
nC  
nC  
nC  
VDS = 60V, VGS = 10 V  
Gate-Source Charge  
Gate-Drain Charge (Miller Charge)  
QGS  
QGD  
ID = 48A, (Note 4, 5)  
45  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 8  
QW-R502-097,A  
www.unisonic.com.tw  
75N75  
Power MOSFET  
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
A
Source-Drain Diode Ratings and Characteristics  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
IS  
ISM  
VSD  
trr  
75  
300  
1.4  
IS = 48A, VGS = 0 V  
V
IS = 48A, VGS = 0 V  
dIF / dt = 100 A/µs  
90  
ns  
µC  
Qrr  
300  
Note 1. Repeativity rating: pulse width limited by junction temperature  
2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃  
3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃  
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%  
5. Essentially independent of operating temperature.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 8  
QW-R502-097,A  
www.unisonic.com.tw  
75N75  
Power MOSFET  
ꢀ
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
VGS=  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
(D.U.T.)  
VDD  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 8  
QW-R502-097,A  
www.unisonic.com.tw  
75N75  
Power MOSFET  
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)  
RL  
VDS  
VDS  
90%  
VDD  
VGS  
RG  
10%  
VGS  
D.U.T.  
10V  
tD(ON )  
tD(OFF)  
Pulse Width ≤ 1μs  
Duty Factor ≤0.1%  
tF  
tR  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
Same Type  
as D.U.T.  
50kΩ  
QG  
12V  
10V  
0.3μF  
0.2μF  
VDS  
QGS  
QGD  
VGS  
DUT  
VG  
1mA  
Charge  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
L
VDS  
BVDSS  
RD  
VDD  
10V  
D.U.T.  
tp  
IAS  
Time  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 8  
QW-R502-097,A  
www.unisonic.com.tw  
75N75  
Power MOSFET  
ꢀ
TYPICAL CHARACTERISTICS  
Transfer Characteristics  
On-State Characteristics  
V
GS  
Top: 15V  
10 V  
8 V  
℃
102  
101  
7 V  
6 V  
5 .5V  
102  
101  
0
5
1
5V  
Bottorm : 4.5V  
4.5V  
℃
5
2
Note:  
1. VDS=25V  
2. 20µs Pulse Test  
100  
100  
101  
10-1  
100  
2
3
4
5
6
7
8
9 10  
Gate-Source Voltage, VGS (V)  
Drain-Source Voltage, VDS (V)  
Reverse Drain Current vs. Allowable Case  
Temperature  
On-Resistance Variation vs. Drain  
Current and Gate Voltage  
15  
102  
14  
150℃  
VGS=10V  
13  
12  
11  
101  
25℃  
*Note:  
1. VGS=0V  
2. 250µs Test  
100  
0
10 20 30 40 50 60 70 80 90 100  
Drain Current, ID (A)  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Source-Drain Voltage, VSD (V)  
Capacitance Characteristics  
(Non-Repetitive)  
Gate Charge Characteristics  
6000  
5000  
4000  
12  
C
ISS=CGS+CGD (CDS=shorted)  
OSS=CDS+CGD  
CRSS=CGD  
C
10  
CISS  
8
6
4
VDS=38V  
3000  
2000  
VDS=60V  
*Note:  
1. VGS=0V  
2.f = 1MHz  
1000  
0
2
CRSS  
*Note: ID=48A  
COSS  
0
10 15  
0
5
20 25 30 35 40 45  
5
10 15 20 25 30 35  
Total Gate Charge, QG (nC)  
Drain-Source Voltage, VDC (V)  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 8  
QW-R502-097,A  
www.unisonic.com.tw  
75N75  
Power MOSFET  
ꢀ
TYPICAL CHARACTERISTICS(Cont.)  
Breakdown Voltage Variation vs.  
Junction Temperature  
On-Resistance Variation vs.  
Junction Temperature  
3.0  
2.5  
2.0  
1.5  
1.0  
1.2  
1.1  
1.0  
*Note:  
1. VGS=0V  
2. ID=250µA  
*Note:  
1. VGS=10V  
2. ID=3.5A  
0.9  
0.8  
0.5  
0.0  
200  
50 100 150  
-100 -50  
0
-100 -50  
0
50  
100 150 200  
Junction Temperature, TJ (℃)  
Junction Temperature, TJ (℃)  
Maximum Drain Current vs. Case  
Temperature  
Maximum Safe Operating  
70  
60  
Operation in This  
Area by RDS(ON)  
100  
10  
50  
100µs  
40  
30  
20  
10ms  
1ms  
DC  
1
*Note:  
1. Tc=25℃  
10  
0
2. TJ=150℃  
3.Single Pulse  
0.1  
150  
25  
50  
75  
100  
125  
1
10  
100  
1000  
Drain-Source Voltage, VD (V)  
Case Temperature, TC (℃)  
Transient Thermal Response Curve  
D=0.5  
1
0.2  
0.1  
0.1  
0.05  
0.02  
*Note:  
0.01  
1.  
ZθJC (t) = 0.88℃/W Max.  
0.01  
2. Duty Factor , D=t1/t2  
Single pulse  
3. TJ -TC=PDM×ZθJC (t )  
1
10  
1E-5 1E-4 1E-3 0.01  
0.1  
Square Wave Pulse Duration, t1 (sec)  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 8  
QW-R502-097,A  
www.unisonic.com.tw  
75N75  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
8 of 8  
QW-R502-097,A  
www.unisonic.com.tw  

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