75N75L-TA3-R [UTC]
75Amps, 75Volts N-CHANNEL POWER MOSTFET; 75安培, 75Volts N沟道功率MOSTFET型号: | 75N75L-TA3-R |
厂家: | Unisonic Technologies |
描述: | 75Amps, 75Volts N-CHANNEL POWER MOSTFET |
文件: | 总8页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
75N75
Power MOSFET
75Amps, 75Volts
N-CHANNEL POWER MOSTFET
1
TO- 251
TO-252
1
ꢀ
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
1
TO-220
ꢀ
FEATURES
1
* RDS(ON) = 12.5mΩ @VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
TO-220F
*Pb-free plating product number: 75N75L
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
ꢀ
SYMBOL
2.Drain
1.Gate
3.Source
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
D
D
D
3
S
S
S
S
S
75N75-TA3-T
75N75-TF3-T
75N75-TM3-T
75N75-TN3-R
75N75-TN3-T
75N75L-TA3-T
75N75L-TF3-T
75N75L-TM3-T
75N75L-TN3-R
75N75L-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
Tube
Tube
G
G
G
G
G
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
75N75L-TA3-T
(1)Packing Type
(2)Package Type
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd.
QW-R502-097,A
75N75
Power MOSFET
ꢀ
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain to Source Voltage
75
75
TC = 25℃
A
Continuous Drain Current
ID
TC = 100℃
56
A
Drain Current Pulsed (Note 1)
Gate to Source Voltage
IDM
VGS
EAS
300
±20
A
V
Single Pulsed (Note 2)
Repetitive (Note 1)
900
300
mJ
mJ
V/ns
W
Avalanche Energy
EAR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation
15
TC = 25℃
220
PD
Derating above 25℃
1.4
W/℃
℃
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
0.5
MAX
62.5
0.8
UNIT
℃/W
℃/W
℃/W
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Thermal Resistance Case-Sink
θJC
θCS
ꢀ
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
0.08
MAX
UNIT
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS = 0 V, ID = 250 µA
ID = 1mA,
Referenced to 25℃
VDS = 75 V, VGS = 0 V
75
V
V/℃
µA
△BVDSS/△TJ
20
Drain-Source Leakage Current
IDSS
V
DS = 75 V, VGS = 0 V,
250
µA
TJ = 150℃
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
100
nA
nA
IGSS
-100
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 48 A
2.0
4.0
15
V
12.5
mΩ
Dynamic Characteristics
Input Capacitance
CISS
COSS
CRSS
3300
530
80
pF
pF
pF
VGS = 0 V, VDS = 25 V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
12
79
80
52
90
20
30
ns
ns
VDD = 38V, ID =48A,
VGS=10V, (Note 4, 5)
Turn-Off Delay Time
Fall Time
ns
ns
Total Gate Charge
QG
140
35
nC
nC
nC
VDS = 60V, VGS = 10 V
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
QGS
QGD
ID = 48A, (Note 4, 5)
45
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75N75
Power MOSFET
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
A
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
75
300
1.4
IS = 48A, VGS = 0 V
V
IS = 48A, VGS = 0 V
dIF / dt = 100 A/µs
90
ns
µC
Qrr
300
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃
3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
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75N75
Power MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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75N75
Power MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON )
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
1mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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75N75
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-State Characteristics
V
GS
Top: 15V
10 V
8 V
℃
102
101
7 V
6 V
5 .5V
102
101
0
5
1
5V
Bottorm : 4.5V
4.5V
℃
5
2
Note:
1. VDS=25V
2. 20µs Pulse Test
100
100
101
10-1
100
2
3
4
5
6
7
8
9 10
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
Reverse Drain Current vs. Allowable Case
Temperature
On-Resistance Variation vs. Drain
Current and Gate Voltage
15
102
14
150℃
VGS=10V
13
12
11
101
25℃
*Note:
1. VGS=0V
2. 250µs Test
100
0
10 20 30 40 50 60 70 80 90 100
Drain Current, ID (A)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
6000
5000
4000
12
C
ISS=CGS+CGD (CDS=shorted)
OSS=CDS+CGD
CRSS=CGD
C
10
CISS
8
6
4
VDS=38V
3000
2000
VDS=60V
*Note:
1. VGS=0V
2.f = 1MHz
1000
0
2
CRSS
*Note: ID=48A
COSS
0
10 15
0
5
20 25 30 35 40 45
5
10 15 20 25 30 35
Total Gate Charge, QG (nC)
Drain-Source Voltage, VDC (V)
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75N75
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Junction Temperature
On-Resistance Variation vs.
Junction Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
*Note:
1. VGS=0V
2. ID=250µA
*Note:
1. VGS=10V
2. ID=3.5A
0.9
0.8
0.5
0.0
200
50 100 150
-100 -50
0
-100 -50
0
50
100 150 200
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating
70
60
Operation in This
Area by RDS(ON)
100
10
50
100µs
40
30
20
10ms
1ms
DC
1
*Note:
1. Tc=25℃
10
0
2. TJ=150℃
3.Single Pulse
0.1
150
25
50
75
100
125
1
10
100
1000
Drain-Source Voltage, VD (V)
Case Temperature, TC (℃)
Transient Thermal Response Curve
D=0.5
1
0.2
0.1
0.1
0.05
0.02
*Note:
0.01
1.
ZθJC (t) = 0.88℃/W Max.
0.01
2. Duty Factor , D=t1/t2
Single pulse
3. TJ -TC=PDM×ZθJC (t )
1
10
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration, t1 (sec)
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75N75
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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