7N10L-TN3-T [UTC]
7A, 100V N-CHANNEL POWER MOSFET; 7A ， 100V N沟道功率MOSFET
| 型号： | 7N10L-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 7A, 100V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
7N10
Power MOSFET
7A, 100V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC 7N10 is an N-Channel enhancement mode power
MOSFET, providing customers with excellent switching performance
and minimum on-state resistance. The UTC 7N10 uses planar stripe
and DMOS technology to provide perfect quality. This device can
also withstand high energy pulse in the avalanche and the
commutation mode.
The UTC 7N10 is generally applied in low voltage applications,
such as DC motor controls, audio amplifiers and high efficiency
switching DC/DC converters,.
FEATURES
* Low Gate Charge: 5.8nC (TYP.)
* Low CRSS: 10 pF (TYP.)
* RDS(ON) = 0.35Ω @VGS = 10 V
* Fast Switching
* Improved dv/dt Capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
7N10L-AA3-R
7N10L-TN3-R
7N10L-TN3-T
7N10G-AA3-R
7N10G-TN3-R
7N10G-TN3-T
SOT-223
TO-252
TO-252
G
G
G
S
Tape Reel
Tape Reel
Tube
S
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-394.F
7N10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain -Source Voltage
Gate-Source Voltage
100
±25
V
TC =25°C
TC = 70°C
7
6.8
A
Continuous Drain Current
ID
A
Pulsed Drain Current (Note 2)
IDM
16
A
Avalanche Current (Note 2)
IAR
7
A
Repetitive Avalanche Energy (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAR
0.2
mJ
mJ
V/ns
EAS
50
dv/dt
6.0
SOT-223
Power Dissipation
2.0
W
TO-252
2.5
PD
SOT-223
Derate above 25°C
0.016
0.02
-55 ~ +150
-55 ~ +150
W/°C
TO-252
Operating Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L =26mH, IAS =1.7A, VDD =25V, RG =25Ω Starting TJ =25°C
4. ISD ≤7.3A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ =25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
SOT-223
TO-252
Junction to Ambient
θJA
50
Note: When mounted on the minimum pad size recommended (PCB Mount)
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVDSS
TEST CONDITIONS
VGS =0V, ID =250µA
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
100
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID =250µA
0.1
VDS =100V, VGS =0V
1
Drain-Source Leakage Current
IDSS
IGSS
VDS =80V, TC =125°C
VGS =±25V, VDS =0V
10
µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
±100 nA
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID =250µA
2.0
4.0
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
VGS =10V, ID =3.5A
0.28 0.35
1.85
VDS =40V, ID =0.85A (Note 1)
CISS
COSS
CRSS
190 250
pF
pF
pF
Output Capacitance
VDS =25V, VGS=0V, f=1.0MHz
60
10
75
13
Reverse Transfer Capacitance
UNISONIC TECHNOLOGIES CO., LTD
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7N10
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
5.8 7.5
1.4
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=80V, ID=7.3A
Gate Source Charge
Gate Drain Charge
(Note 1,2)
2.5
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
7
25
60
35
50
24
13
19
VDD=50V, ID=7.3A, RG=25Ω
(Note 1,2)
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
7
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
16
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
trr
IS =7A, VGS =0V
VGS=0V, IS=7.3A,
diF/dt=100A/µs
1.5
V
70
ns
nC
Reverse Recovery Charge
QRR
150
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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7N10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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7N10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
RG
ID
IAS
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
Unclamped Inductive Switching Waveforms
tP
Unclamped Inductive Switching Test Circuit
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7N10
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-State Resistance
Characteristics
Maximum Safe Operation Area
100
10
4
3.5
3
VGS=10V, ID=3.5A
2.5
2
10µs
1
0.1
100µs
1.5
1ms
10ms
1
100ms
DC
0.5
TA=25ºC
0
0.01
0.1
1
10
60
0
0.2
0.4
0.6
0.8
Drain to Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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