7N60G-M-B-TA3-T [UTC]
Transistor;
| 型号： | 7N60G-M-B-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
7N60
Power MOSFET
7.4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
1
1
TO-220
DESCRIPTION
The UTC 7N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
TO-220F
FEATURES
* RDS(ON) = 1.0Ω @VGS = 10 V (7N60/7N60-R)
DS(ON) = 1.2Ω @VGS = 10 V (7N60-F/7N60-M/7N60-Q)
* Ultra low gate charge (typical 29 nC )
* Low reverse transfer Capacitance ( CRSS = typical 16pF )
* Fast switching capability
1
TO-220F1
TO-262
R
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
1
SYMBOL
1
TO-263
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
S
7N60L-x-x-TA3-T
7N60L-x-x-TF1-T
7N60L-x-x-TF3-T
7N60L-x-x-T2Q-T
7N60L-x-x-TQ2-R
7N60L-x-x-TQ2-T
7N60G-x-x-TA3-T
7N60G-x-x-TF1-T
7N60G-x-x-TF3-T
7N60G-x-x-T2Q-T
7N60G-x-x-TQ2-R
7N60G-x-x-TQ2-T
TO-220
TO-220F1
TO-220F
TO-262
G
G
G
G
G
G
D
D
D
D
D
D
Tube
Tube
Tube
Tube
TO-263
Tape Reel
Tube
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-076,Ia
7N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
7N60-A
7N60-B
600
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
IAR
±30
V
Avalanche Current (Note 2)
7.4
A
Continuous
ID
7.4
A
Drain Current
Pulsed (Note 2)
IDM
29.6
530
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
dv/dt
mJ
mJ
V/ns
W
Avalanche Energy
14.2
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
142
Power Dissipation
PD
48
W
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
TO-220/TO-262/TO-263
Junction to Ambient
Junction to Case
θJA
TO-220F/TO-220F1
TO-220/TO-262/TO-263
TO-220F/TO-220F1
62.5
0.88
θJC
2.6
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
7N60-A
7N60-B
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
1
μA
Forward
Reverse
100 nA
-100 nA
IGSS
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
Coefficient
ID = 250μA,
Referenced to 25°C
△BVDSS/△TJ
0.67
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
1.0
1.2
1.2
1.2
1.0
V
Ω
Ω
Ω
Ω
Ω
7N60
7N60-F
7N60-M
7N60-Q
7N60-R
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
1400 pF
180 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
16
21
pF
tD(ON)
tR
tD(OFF)
tF
70
ns
Turn-On Rise Time
VDD =300V, ID =7.4A, RG =25Ω
(Note 1, 2)
170 ns
140 ns
130 ns
Turn-Off Delay Time
Turn-Off Fall Time
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7N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
QGS
QGD
29
7
38
nC
nC
nC
VDS=480V, ID=7.4A, VGS=10 V
(Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
14.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 7.4 A
1.4
7.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
29.6
A
Reverse Recovery Time
tRR
VGS = 0V, IS = 7.4 A,
dIF / dt = 100A/μs (Note 1)
320
2.4
ns
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
CLASSIFICATION OF RDS(ON)
RANK
-
F
M
Q
R
VALUE
1.0Ω
1.2Ω
1.2Ω
1.2Ω
1.0Ω
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7N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
P.W.
D=
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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7N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VGS
RG
VDD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same
Type as
D.U.T.
50kꢀ
12V
0.2µF
VGS
0.3µF
VDS
DUT
3mA
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
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7N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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