7N65KG-TA3-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 7N65KG-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
7N65K-MTQ
Power MOSFET
7A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N65K-MTQ is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
high speed switching applications of switching power supplies and
adaptors.
FEATURES
* RDS(ON) < 1.6 Ω @ VGS = 10 V, ID = 3.5 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
2
3
S
S
S
S
S
S
S
Lead Free
Halogen Free
7N65KL-TA3-T
7N65KL-TF3-T
7N65KL-TF1-T
7N65KL-TF2-T
7N65KL-TF3T-T
7N65KL-TM3-T
7N65KL-TN3-R
7N65KG-TA3-T
7N65KG-TF3-T
7N65KG-TF1-T
7N65KG-TF2-T
7N65KG-TF3T-T
7N65KG-TM3-T
7N65KG-TN3-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
Tube
TO-252
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R205-020.E
7N65K-MTQ
Power MOSFET
MARKING
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7N65K-MTQ
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage
650
±30
7
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
ID
7
A
IDM
24
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
350
4.5
125
mJ
ns
W
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
TO-220F/TO-220F1
TO-220F3
40
W
Power Dissipation
PD
TO-220F2
42
55
W
W
TO-251/TO-252
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14.28mH, IAS = 7A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 7A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATING
62.5
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
θJA
TO-251/TO-252
TO-220
110
1.0
TO-220F/TO-220F1
TO-220F3
3.2
Junction to Case
θJC
°C/W
TO-220F2
2.97
2.27
TO-251/TO-252
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7N65K-MTQ
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
650
V
10
μA
Forward
Reverse
100 nA
-100 nA
0.53 V/°C
Gate- Source Leakage Current
IGSS
VGS = -30V, VDS = 0V
ID=250μA, Referenced to 25°C
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
1.6
V
VGS = 10V, ID = 3.5A
Ω
CISS
COSS
CRSS
875 1000 pF
88 120 pF
VDS=25V, VGS=0V,
Output Capacitance
f=1.0 MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
8
25
pF
tD(ON)
tR
tD(OFF)
tF
50
65
60
80
ns
ns
Turn-On Rise Time
VDD=30V, ID =0.5A,
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
110 130 ns
55 70 ns
22.5 40 nC
Turn-Off Fall Time
Total Gate Charge
QG
VDS=50V, ID=1.3A,
Gate-Source Charge
QGS
QGD
7.5
5
nC
nC
VGS=10V (Note 1, 2)
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 7 A
1.4
7
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
28
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
320
2.4
ns
IS=7A, di/dt=100A/μs
QRR
nC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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7N65K-MTQ
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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7N65K-MTQ
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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7N65K-MTQ
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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