81N33-K-T92-E-B [UTC]
Power Management Circuit, Fixed, 1 Channel, +3.3VV, CMOS, TO-92, 3 PIN;
| 型号： | 81N33-K-T92-E-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Management Circuit, Fixed, 1 Channel, +3.3VV, CMOS, TO-92, 3 PIN |
| 文件： | 总15页 (文件大小：418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
81CXXX/81NXXX
CMOS IC
VOLTAGE DETECTORS WITH
BUILT-IN DELAY TIME
1
3
1
2
SOT-23
SOT-89
DESCRIPTION
The UTC 81CXXX and 81NXXX series are good
performance voltage detector and manufactured by CMOS
technologies with highly accurate, low power consumption.
A
delay circuit is built-in to each detector, therefore, peripherals
are unnecessary and high density mounting is possible. Detect
voltage is extremely accurate with minimal temperature drift.
Both CMOS and N-channel open drain output configurations are
available.
1
SOT-223
1
FEATURES
TO-92
*Highly Accurate : Detect voltage ± 2%
*Built-In Delay time : 1ms ~ 50ms,
50ms ~ 200ms,
Lead-free:
Halogen-free: 81CXXXG/81NXXXG
81CXXXL/81NXXXL
200ms ~ 400ms,
*Detect Voltage Temperature Characteristics:
TYP± 100ppm/℃
*Wide Operating Voltage Range : 0.7V ~ 10.0V
*Low Current Consumption : TYP 1.0 μA (VIN=2.0V)
ORDERING INFORMATION
CMOS:
Ordering Number
Lead Free Plating
①:Delay Time
Pin Assign.
Package
Packing
Normal
Halogen Free
Duration
Code
1
O
O
O
G
I
2
G
I
3
I
81Cxx-①-AA3-B-R 81CxxL-①-AA3-B-R 81CxxG-①-AA3-B-R
81Cxx-①-AB3-E-R 81CxxL-①-AB3-E-R 81CxxG-①-AB3-E-R
81Cxx-①-AE3-3-R 81CxxL-①-AE3-3-R 81CxxG-①-AE3-3-R
81Cxx-①-AE3-5-R 81CxxL-①-AE3-5-R 81CxxG-①-AE3-5-R
81Cxx-①-AE3-2-R 81CxxL-①-AE3-2-R 81CxxG-①-AE3-2-R
81Cxx-①-T92-D-B 81CxxL-①-T92-D-B 81CxxG-①-T92-D-B
81Cxx-①-T92-E-B 81CxxL-①-T92-E-B 81CxxG-①-T92-E-B
81Cxx-①-T92-D-K 81CxxL-①-T92-D-K 81CxxG-①-T92-D-K
81Cxx-①-T92-E-K 81CxxL-①-T92-E-K 81CxxG-①-T92-E-K
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
TO-92
Tape Reel
G Tape Reel
G
O
O
G
I
I
I
Tape Reel
Tape Reel
1 ~ 50 ms
50 ~ 200 ms
200 ~ 400 ms
P
Q
R
G Tape Reel
I
O
G
O
G
Tape Box
Tape Box
Bulk
TO-92
O
I
TO-92
G
I
TO-92
O
Bulk
N-Channel:
Ordering Number
①:Delay Time
Pin Assign.
Package
Packing
Normal
Lead Free Plating
Halogen Free
Duration
Code
1
O
O
O
G
I
2
G
I
3
I
81Nxx-①-AA3-B-R 81NxxL-①-AA3-B-R 81NxxG-①-AA3-B-R
81Nxx-①-AB3-E-R 81NxxL-①-AB3-E-R 81NxxG-①-AB3-E-R
81Nxx-①-AE3-3-R 81NxxL-①-AE3-3-R 81NxxG-①-AE3-3-R
81Nxx-①-AE3-5-R 81NxxL-①-AE3-5-R 81NxxG-①-AE3-5-R
81Nxx-①-AE3-2-R 81NxxL-①-AE3-2-R 81NxxG-①-AE3-2-R
81Nxx-①-T92-D-B 81NxxL-①-T92-D-B 81NxxG-①-T92-D-B
81Nxx-①-T92-E-B 81NxxL-①-T92-E-B 81NxxG-①-T92-E-B
81Nxx-①-T92-D-K 81NxxL-①-T92-D-K 81NxxG-①-T92-D-K
81Nxx-①-T92-E-K 81NxxL-①-T92-E-K 81NxxG-①-T92-E-K
Note: 1. Pin assignment: I:VIN O:VOUT G:VSS
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
TO-92
Tape Reel
G Tape Reel
G
O
O
G
I
I
I
Tape Reel
Tape Reel
1 ~ 50 ms
50 ~ 200 ms
200 ~ 400 ms
H
J
G Tape Reel
K
I
O
G
O
G
Tape Box
Tape Box
Bulk
TO-92
O
I
TO-92
G
I
TO-92
O
Bulk
2. xx: Output Voltage, refer to Marking Information.
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-039,L
81CXXX/81NXXX
CMOS IC
ORDERING INFORMATION(Cont.)
1
81CxxL- -AB3-x-R
(1) R: Tape Reel, B: Tape Box, K: Bulk
(2) refer to Pin Assignment
(3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23,
T92: TO-92
(1)Packing Type
(2)Pin Code
(3)Package Type
(4)Delay Time
(5)Lead Plating
1
(4) :refer to Delay Time
(5) G: Halogen Free, L: Lead Free,
Blank: Pb/Sn
(6) xx: refer to Marking Information
(6)Output Voltage Code
(7)Output Configuration
(7) C: CMOS, N: N-Cannel
MARKING INFORMATION
PACKAGE
VOLTAGE CODE
MARKING
10:1.0V
11:1.1V
12:1.2V
13:1.3V
14:1.4V
15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
SOT-223
SOT-89
40:4.0V
41:4.1V
42:4.2V
43:4.3V
44:4.4V
45:4.5V
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
TO-92
PACKAGE INTEGER* CODE DECIMAL** CODE
MARKING
1.
2.
3.
4.
5.
6.
1
2
3
4
5
6
.0
.1
.2
.3
.4
.5
.6
.7
.8
.9
A
B
C
D
E
F
SOT-23
G
H
J
K
*
Represents the integer of the Detect Voltage
** Represents the decimal number of the Detect Voltage
EXAMPLE:
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81CXXX/81NXXX
CMOS IC
BLOCK DIAGRAM
VIN
Delay
Circuit
VOUT
VREF
Vss
CMOS Output
VIN
VOUT
Delay Circuit
VREF
Vss
N-channel Open Drain Output
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81CXXX/81NXXX
CMOS IC
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
VIN
RATINGS
UNIT
V
Input Voltage
12
50
Output Current
IOUT
mA
CMOS
N-Ch open drain
SOT-223
SOT-23
VSS-0.3 ~ VIN+0.3
Output Voltage
VOUT
V
VSS-0.3 ~ 9
800
150
Power Dissipation
PD
mW
SOT-89
500
TO-92
300
Operating Temperature
Storage Temperature
TOPR
TSTG
-30 ~ +80
℃
℃
-40 ~ +125
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
15
UNIT
SOT-223
SOT-23
SOT-89
TO-92
200
100
45
Thermal Resistance Junction-Case
θJC
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Detection voltage (1.0V ~ 1.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
DF (T)
X0.98
VDF
X0.02
0.7
TYP
MAX UNIT
V
V
DF (T)
X1.02
VDF
Detect Voltage
VDF
1
VDF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
VHYS
VIN
1
1
2
X0.05 X0.08
10.0
VDF=1.6V ~ 6.0V
VIN=1.5V
VIN=5.0
V
0.9
2.0
2.6
4.2
μA
μA
ISS
N-ch
3
4
mA
VDS=0.5V, VIN =1.0V
2.2
Output Current
IOUT
P-ch
VDS=2.1V, VIN=8.0V
-15.4
mA
(CMOS output)
VDF
ΔVDF
ΔTOPR×VDF
ppm/℃
±100
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
V
IN changes from
tDLY
*
5
50
200
ms
0.6V ~ 10V
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81CXXX/81NXXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
X0.98
VDF
X0.02
0.7
DF (T)
V
DF (T)
X1.02
VDF
Detect Voltage
VDF
1
V
DF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
VHYS
VIN
1
1
2
X0.05 X0.08
10.0
VDF=1.6V ~ 6.0V
VIN=2.0V
VIN=5.0V
N-ch
V
1.0
2.0
3.0
4.2
μA
μA
ISS
3
4
VDS=0.5V, VIN =2.0V
7.9
mA
mA
Output Current
IOUT
P-ch
VDS=2.1V, VIN=8.0V
-15.4
(CMOS output)
VDF
ΔVDF
ΔTOPR×VDF
ppm/℃
±100
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
V
IN changes from
tDLY
*
5
50
200
ms
0.6V ~ 10V
Detection voltage (3.0V ~ 3.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
DF (T)
X0.98
VDF
V
DF (T)
X1.02
VDF
Detect Voltage
VDF
1
V
DF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
VHYS
VIN
1
1
2
X0.02
0.7
X0.05 X0.08
10.0
VDF=1.6V ~ 6.0V
VIN =3.0V
VIN =5.0V
N-ch
V
1.3
2.0
3.4
4.2
μA
μA
ISS
3
4
mA
VDS=0.5V, VIN =3.0V
10.1
Output Current
IOUT
P-ch
VDS=2.1V, VIN=8.0V
-15.4
mA
(CMOS output)
VDF
ΔVDF
ΔTOPR×VDF
ppm/℃
±100
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
V
IN changes from
tDLY
*
5
50
200
ms
0.6V ~ 10V
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81CXXX/81NXXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 4.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
X0.98
VDF
X0.02
0.7
DF (T)
V
DF (T)
X1.02
VDF
Detect Voltage
VDF
1
V
DF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
VHYS
VIN
1
1
2
X0.05 X0.08
10.0
VDF=1.6V ~ 6.0V
VIN=4.0V
VIN=5.0V
N-ch
V
1.5
2.0
3.8
4.2
μA
μA
ISS
3
4
VDS=0.5V, VIN=4.0V
11.5
mA
mA
Output Current
IOUT
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
-15.4
VDF
ΔVDF
ΔTOPR×VDF
ppm/℃
±100
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
V
IN changes from
tDLY
*
5
50
200
ms
0.6V ~ 10V
Detection voltage (5.0V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
DF (T)
X0.98
VDF
V
DF (T)
X1.02
VDF
Detect Voltage
VDF
1
1
V
DF (T)
V
V
VDF
Hysteresis Range
VHYS
X0.02
0.7
X0.05 X0.08
10.0
Operating Voltage
Supply Current
VIN
ISS
1
2
3
VDF=1.6V ~ 6.0V
VIN=5.0V
V
2.0
4.2
μA
mA
N-ch VDS=0.5V, VIN =5.0V
P-ch
13.0
Output Current
IOUT
4
VDS=2.1V, VIN=8.0V
-15.4
±100
mA
(CMOS output)
VDF
ΔVDF
ΔTOPR×VDF
ppm/℃
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
VIN changes from
tDLY
*
5
50
200
ms
0.6V ~ 10V
VDF (T): established detect voltage value
Release Voltage: VDR = VDF + VHYS
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2 μA greater than it is
after that period (completion of release operation) because of delay circuit through current.
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81CXXX/81NXXX
CMOS IC
TEST CIRCUITS
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81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS
(1) AMBIENT TEMPERATURE vs. TRANSIENT DELAY TIME
81C30Q
81C30R
400
320
240
200
150
100
50
160
80
70
50
-30
-10
10
30
70
-30
-10
10
30
50
Ambient Temp., Ta ( ℃)
Ambient Temp., Ta ( ℃)
81C30P
50
40
30
20
10
0
30
50
-30
-10
10
70
Ambient Temp., Ta ( ℃)
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81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(2) P-CHANNEL DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE
(2) TRANSIENT DELAY TIME vs. INPUT VOLTAGE
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81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(3) SUPPLY CURRENT vs. INPUT VOLTAGE
81N16
81N25
4.0
4.0
3.0
2.0
3.0
Ta=80℃
Ta=80℃
2.0
25℃
25℃
1.0
1.0
0.0
0.0
10
0
2
4
6
10
0
2
4
6
8
8
Input Voltage, V IN (V)
81N27
Input Voltage, V IN (V)
81N28
4.0
3.0
2.0
4.0
3.0
2.0
Ta=80℃
Ta=80℃
25℃
25℃
1.0
0.0
1.0
0.0
10
0
2
4
6
8
(V)
10
0
2
4
6
8
Input Voltage, V IN
81N29
Input Voltage, V IN (V)
81N30
4.0
3.0
2.0
4.0
3.0
2.0
Ta=80℃
Ta=80℃
25℃
25℃
1.0
0.0
1.0
0.0
10
0
2
4
6
8
10
0
2
4
6
8
Input Voltage, V IN (V)
(V)
Input Voltage, V IN
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81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(4) OUTPUT VOLTAGE vs. INPUT VOLTAGE
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81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N29
VIN-VOUT:100kΩ
81N30
VIN-VOUT:100kΩ
5
4
3
2
/ 80℃
/ 80℃
Ta=25℃
Ta=25℃
4
3
2
1
0
1
0
4
0
2
3
0
1
2
3
4
5
1
IN
Input Voltage, V (V)
Input Voltage, VIN (V)
(5) N-CHANNEL DRIVRE OUTPUT CURRENT vs. VDS
81N16
81N16
1400
15
Ta=25℃
Ta=25℃
1200
VIN=0.8V
12
1000
800
VIN=1.5V
9
6
600
400
0.7V
1.0V
3
200
0
0
2.0
1.0
0.0
0.5
1.0
1.5
0.4
0.6
0.8
0
0.2
VDS (V)
VDS (V)
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81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
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81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N29
81N29
30
25
20
300
250
200
150
Ta=25℃
Ta=25℃
VIN=0.8V
VIN=2.0V
15
0.7V
100
50
0
10
5
1.0V
0
0.4
0.6
0.8
0.0
0.2
1.0
1.0
1.5
2.0
0.0
0.5
2.5
VDS (V)
VDS (V)
81N30
81N30
350
300
60
50
40
Ta=25℃
Ta=25℃
VIN=0.8V
250
200
150
100
50
30
20
10
0
VIN=2.0V
0.7V
0.8
1.0V
0
0.4
0.6
0.0
0.2
1.0
0.5
0.0
1.0 1.5
VDS (V)
2.5 3.0 3.5
2.0
VDS (V)
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81CXXX/81NXXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N35
V IN=0.8V
81N35
1400
1200
60
50
40
Ta=25℃
Ta=25℃
VIN=3.0V
1000
800
600
400
200
0
2.5V
2.0V
0.7V
30
20
10
0
1.5V
0.4
0.6
0.8
0.0
0.2
1.0
0.5
0.0
1.0 1.5
VDS (V)
2.5 3.0 3.5
2.0
VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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