81NXX [UTC]
VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME;
| 型号： | 81NXX |
| 厂家： | 
Unisonic Technologies |
| 描述： | VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME |
| 文件： | 总16页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
81CXX/81NXX
CMOS IC
VOLTAGE DETECTORS WITH
BUILT-IN DELAY TIME
DESCRIPTION
The UTC 81CXX and 81NXX series are good performance
voltage detector and manufactured by CMOS technologies with
highly accurate, low power consumption. A delay circuit is built-in
to each detector, therefore, peripherals are unnecessary and high
density mounting is possible. Detect voltage is extremely accurate
with minimal temperature drift. Both CMOS and N-channel open
drain output configurations are available.
FEATURES
* Highly Accurate:
* Built-In Delay time :
Detect voltage ± 2%
1ms ~ 50ms
50ms ~ 200ms
200ms ~ 400ms
* Detect Voltage Temperature
Characteristics:
TYP± 100ppm/°C
* Wide Operating Voltage Range : 0.7V ~ 10.0V
* Low Current Consumption : TYP 1.0μA (VIN=2.0V)
ORDERING INFORMATION
CMOS:
①:Delay Time
Duration Code
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
O
O
O
G
I
2
G
I
3
I
81CXXG-①-AA3-B-R
81CXXG-①-AB3-E-R
81CXXG-①-AE3-3-R
81CXXG-①-AE3-5-R
81CXXG-①-AE3-2-R
81CXXG-①-T92-D-B
81CXXG-①-T92-E-B
81CXXG-①-T92-D-K
81CXXG-①-T92-E-K
-
-
-
-
-
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
TO-92
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
G
I
G
O
O
G
I
I
1~50
ms
P
Q
R
50~200 ms
200~400 ms
G
O
G
O
G
81CXXL-①-T92-D-B
81CXXL-①-T92-E-B
81CXXL-①-T92-D-K
81CXXL-①-T92-E-K
I
TO-92
O
I
TO-92
G
I
TO-92
O
Bulk
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81CXX/81NXX
CMOS IC
ORDERING INFORMATION(Cont.)
N-Channel:
Ordering Number
①:Delay Time
Duration Code
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
O
O
O
G
I
2
G
I
3
I
-
81NXXG-①-AA3-B-R
81NXXG-①-AB3-E-R
81NXXG-①-AE3-3-R
81NXXG-①-AE3-5-R
81NXXG-①-AE3-2-R
81NXXG-①-T92-D-B
81NXXG-①-T92-E-B
81NXXG-①-T92-D-K
81NXXG-①-T92-E-K
SOT-223
SOT-89
SOT-23
SOT-23
SOT-23
TO-92
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Box
Tape Box
Bulk
-
G
I
-
G
O
O
G
I
-
I
1~50
50~200 ms
200~400 ms
ms
H
J
-
G
O
G
O
G
K
81NXXL-①-T92-D-B
81NXXL-①-T92-E-B
81NXXL-①-T92-D-K
81NXXL-①-T92-E-K
I
TO-92
O
I
TO-92
G
I
TO-92
O
Bulk
Note: 1. Pin assignment: I:VIN O:VOUT G:VSS
2. XX: Output Voltage, refer to Marking Information.
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81CXX/81NXX
CMOS IC
MARKING INFORMATION
PACKAGE
VOLTAGE CODE
MARKING
10:1.0V
11:1.1V
12:1.2V
13:1.3V
14:1.4V
15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
40:4.0V
41:4.1V
SOT-223
42:4.2V
43:4.3V
44:4.4V
45:4.5V
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
SOT-89
L: Lead Free
G: Halogen Free
Voltage Code
UTC
81XXX
C: CMOS
N: N-Channel
TO-92
Pin Code
Date Code
1
2
3
INTEGER
(Note 1)
DECIMAL
(Note 2)
PACKAGE
CODE
CODE
MARKING
1.
2.
3.
4.
5.
6.
1
2
3
4
5
6
.0
.1
.2
.3
.4
.5
.6
.7
.8
.9
A
B
C
D
E
F
3
XX
2
C: CMOS
N: N-Channel
G
1
SOT-23
Voltage Code
Pin Code
G
H
J
K
Notes: 1. Represents the integer of the Detect Voltage
2. Represents the decimal number of the Detect Voltage
EXAMPLE:
81C27
3
81N27
3
N: N-Channel
Voltage Code
C: CMOS
Pin Code
Pin Code
2HC G
2HN G
G: Halogen Free
G: Halogen Free
Voltage Code
2
1
2
1
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81CXX/81NXX
CMOS IC
BLOCK DIAGRAM
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81CXX/81NXX
CMOS IC
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VIN
RATINGS
UNIT
V
Input Voltage
10
50
Output Current
IOUT
mA
V
CMOS
VSS-0.3 ~ VIN+0.3
Output Voltage
VOUT
N-Ch open drain
SOT-223
SOT-23
VSS-0.3 ~ 9
V
800
150
Power Dissipation
PD
mW
SOT-89
500
TO-92
300
Operating Temperature
Storage Temperature
TOPR
TSTG
-30 ~ +85
°C
°C
-40 ~ +125
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
20
UNIT
°C/W
SOT-223
SOT-23
SOT-89
TO-92
200
Junction to Case
θJC
45
100
ELECTRICAL CHARACTERISTICS (TA=25°C)
Detection voltage (1.0V ~ 1.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
DF (T)
×0.98
VDF
TYP
MAX UNIT
V
V
DF (T)
×1.02
VDF
Detect Voltage
VDF
1
VDF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
VHYS
VIN
1
1
2
3
4
×0.02 ×0.05 ×0.08
VDF=1.6V ~ 6.0V
VIN=1.5V
0.7
10.0
2.6
V
0.9
2.0
2.2
μA
μA
mA
ISS
VIN=5.0
4.2
VDS=0.5V, VIN =1.0V
VDS=2.1V, VIN=8.0V
(CMOS output)
Output Current
P- Channel
IOUT
-15.4
±100
mA
ppm/°C
ms
∆VDF
VDF
∆TOPR × VDF
Temperature Characteristics
Transient Delay Time
(VDR VOUT inversion)
V
IN changes from
0.6V ~ 10V
tDLY
*
5
50
200
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81CXX/81NXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
×0.98
VDF
×0.02
0.7
DF (T)
V
DF (T)
×1.02
VDF
Detect Voltage
VDF
1
V
DF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
VHYS
VIN
1
1
2
3
4
×0.05 ×0.08
10.0
VDF=1.6V ~ 6.0V
VIN=2.0V
V
1.0
2.0
7.9
3.0
4.2
μA
μA
mA
ISS
VIN=5.0V
VDS=0.5V, VIN =2.0V
Output Current
P- Channel
IOUT
VDS=2.1V, VIN=8.0V
-15.4
±100
mA
ppm/°C
ms
(CMOS output)
∆VDF
VDF
∆TOPR × VDF
Temperature Characteristics
Transient Delay Time
(VDR VOUT inversion)
VIN changes from
tDLY
*
5
50
200
0.6V ~ 10V
Detection voltage (3.0V ~ 3.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
DF (T)
×0.98
VDF
V
DF (T)
×1.02
VDF
Detect Voltage
VDF
1
V
DF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
VHYS
VIN
1
1
2
3
4
×0.02 ×0.05 ×0.08
VDF=1.6V ~ 6.0V
VIN =3.0V
0.7
10.0
3.4
V
1.3
2.0
μA
μA
mA
ISS
VIN =5.0V
4.2
VDS=0.5V, VIN =3.0V
VDS=2.1V, VIN=8.0V
(CMOS output)
10.1
Output Current
P- Channel
IOUT
-15.4
±100
mA
ppm/°C
ms
∆VDF
VDF
∆TOPR × VDF
Temperature Characteristics
Transient Delay Time
(VDR VOUT inversion)
VIN changes from
tDLY
*
5
50
200
0.6V ~ 10V
Detection voltage (4.0V ~ 4.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
×0.98
VDF
DF (T)
V
DF (T)
×1.02
VDF
Detect Voltage
VDF
1
V
DF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
VHYS
VIN
1
1
2
3
4
×0.02 ×0.05 ×0.08
VDF=1.6V ~ 6.0V
VIN=4.0V
0.7
10.0
3.8
V
1.5
2.0
μA
μA
mA
ISS
VIN=5.0V
4.2
VDS=0.5V, VIN=4.0V
11.5
Output Current
P- Channel
IOUT
VDS=2.1V, VIN=8.0V
-15.4
±100
mA
ppm/°C
ms
(CMOS output)
∆VDF
VDF
∆TOPR × VDF
Temperature Characteristics
Transient Delay Time
(VDR VOUT inversion)
VIN changes from
tDLY
*
5
50
200
0.6V ~ 10V
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81CXX/81NXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (5.0V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
×0.98
VDF
DF (T)
V
DF (T)
×1.02
VDF
Detect Voltage
VDF
1
1
V
DF (T)
V
V
VDF
Hysteresis Range
VHYS
×0.02 ×0.05 ×0.08
Operating Voltage
Supply Current
N-Channel
Output Current
P- Channel
VIN
ISS
1
2
3
VDF=1.6V ~ 6.0V
VIN=5.0V
0.7
10.0
4.2
V
2.0
μA
mA
VDS=0.5V, VIN =5.0V
VDS=2.1V, VIN=8.0V
(CMOS output)
13.0
IOUT
4
-15.4
±100
mA
ppm/°C
ms
∆VDF
VDF
∆TOPR × VDF
Temperature Characteristics
Transient Delay Time
(VDR VOUT inversion)
VIN changes from
tDLY
*
5
50
200
0.6V ~ 10V
VDF (T): established detect voltage value
Release Voltage: VDR = VDF + VHYS
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2μA greater than it is
after that period (completion of release operation) because of delay circuit through current.
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81CXX/81NXX
CMOS IC
TEST CIRCUITS
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81CXX/81NXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Ambient Temperature vs. Transient Delay Time
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81CXX/81NXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(2) P-Channel Driver Output Current vs. Input Voltage
(2) Transient Delay Time vs. Input Voltage
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81CXX/81NXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(3) Supply Current vs. Input Voltage
81N16
4.0
81N25
4.0
3.0
2.0
3.0
TA=80°C
TA=80°C
2.0
25°C
25°C
1.0
1.0
0.0
0.0
10
0
2
4
6
10
0
2
4
6
8
8
Input Voltage, VIN(V)
Input Voltage, VIN(V)
81N27
81N28
4.0
3.0
2.0
4.0
3.0
2.0
TA=80°C
TA=80°C
25°C
25°C
1.0
0.0
1.0
0.0
10
0
2
4
6
8
10
0
2
4
6
8
Input Voltage, VIN(V)
Input Voltage, VIN(V)
81N29
81N30
4.0
3.0
2.0
4.0
3.0
2.0
TA=80°C
TA=80°C
25°C
25°C
1.0
0.0
1.0
0.0
10
0
2
4
6
8
10
0
2
4
6
8
Input Voltage, VIN(V)
Input Voltage, VIN(V)
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81CXX/81NXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(4) Output Voltage vs. Input Voltage
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81CXX/81NXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(5) N-Channel Drivre Output Current vs. VDS
81N16
81N16
1400
1200
15
TA=25°C
TA=25°C
VIN=0.8V
12
1000
800
VIN=1.5V
9
6
600
400
0.7V
1.0V
3
200
0
0
0.0
2.0
1.0
0.5
1.0
VDS (V)
1.5
0.4
0.6
0.8
0
0.2
VDS (V)
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81CXX/81NXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
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81CXX/81NXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N29
81N29
30
25
20
300
250
200
150
TA=25°C
TA=25°C
VIN=0.8V
0.7V
VIN=2.0V
15
10
5
100
50
0
1.0V
0
0.4
0.6
0.8
0.0
0.2
1.0
1.0
1.5
2.0
0.0 0.5
2.5
VDS (V)
VDS (V)
81N30
81N30
350
300
60
50
40
TA=25°C
TA=25°C
250
200
150
100
50
VIN=0.8V
30
20
10
0
VIN=2.0V
0.7V
0.8
1.0V
0
0.0
0.4
0.6
0.2
1.0
0.5
0.0
1.0 1.5
2.5 3.0 3.5
2.0
VDS (V)
VDS (V)
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81CXX/81NXX
CMOS IC
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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