8550SG-E-T92-B [UTC]

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE PACKAGE-3;
8550SG-E-T92-B
型号: 8550SG-E-T92-B
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN FREE PACKAGE-3

放大器 晶体管
文件: 总4页 (文件大小:182K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
8550S  
PNP SILICON TRANSISTOR  
LOW VOLTAGE HIGH  
CURRENT SMALL SIGNAL  
PNP TRANSISTOR  
3
1
2
SOT-23  
„
DESCRIPTION  
The UTC 8550S is a low voltage high current small signal  
PNP transistor, designed for Class B push-pull audio amplifier  
and general purpose applications.  
1
„ FEATURES  
*Collector current up to 700mA  
*Collector-Emitter voltage up to 20 V  
*Complimentary to 8050S  
TO-92  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen-Free  
8550SG-x-AE3-R  
8550SG-x-T92-B  
8550SG-x-T92-K  
1
E
E
E
2
B
C
C
3
C
B
B
8550S-x-AE3-R  
8550S-x-T92-B  
8550S-x-T92-K  
8550SL-x-AE3-R  
8550SL-x-T92-B  
8550SL-x-T92-K  
SOT-23  
TO-92  
TO-92  
Tape Reel  
Tape Box  
Bulk  
„
MARKING (For SOT-23 Package)  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-002,E  
8550S  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-30  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
-20  
-5  
V
-700  
mA  
SOT-23  
TO-92  
350  
1
mW  
W
Collector Dissipation(Ta=25°C)  
PC  
Junction Temperature  
Storage Temperature  
TJ  
+150  
°C  
TSTG  
-40 ~ +150  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„ ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
IC=-100μA, IE=0  
IC=-1mA, IB=0  
IE=-100μA, IC =0  
VCB=-30V, IE=0  
VEB=-5V, IC =0  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
-30  
-20  
-5  
V
V
V
-1  
μA  
nA  
Emitter Cut-off Current  
IEBO  
-100  
V
CE=-1V, IC=-1mA  
100  
120  
40  
hFE1  
hFE2  
hFE3  
DC Current Gain  
VCE=-1V, IC=-150 mA  
400  
VCE=-1V, IC=-500mA  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(SAT) IC=-500mA, IB=-50mA  
VBE(SAT) IC=-500mA, IB=-50mA  
-0.5  
-1.2  
-1.0  
V
V
VBE  
fT  
VCE=-1V, IC=-10mA  
V
VCE=-10V, IC=-50mA  
VCB=-10V, IE=0, f=1MHz  
100  
MHz  
pF  
Cob  
9.0  
CLASSIFICATION OF hFE2  
„
RANK  
C
D
E
RANGE  
120-200  
160-300  
280-400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
www.unisonic.com.tw  
QW-R206-002,E  
8550S  
TYPICAL CHARACTERISTICS  
PNP SILICON TRANSISTOR  
UNISONIC TECHNOGIES CO., LTD  
3 of 4  
www.unisonic.com.tw  
QW-R206-002,E  
8550S  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
www.unisonic.com.tw  
QW-R206-002,E  

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