8550S_10 [UTC]
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR; 低压大电流小信号PNP晶体管
| 型号： | 8550S_10 |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| 文件： | 总4页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
8550S
PNP SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
PNP TRANSISTOR
3
1
2
SOT-23
DESCRIPTION
The UTC 8550S is a low voltage high current small signal
PNP transistor, designed for Class B push-pull audio amplifier
and general purpose applications.
1
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
TO-92
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen-Free
8550SG-x-AE3-R
8550SG-x-T92-B
8550SG-x-T92-K
1
E
E
E
2
B
C
C
3
C
B
B
8550S-x-AE3-R
8550S-x-T92-B
8550S-x-T92-K
8550SL-x-AE3-R
8550SL-x-T92-B
8550SL-x-T92-K
SOT-23
TO-92
TO-92
Tape Reel
Tape Box
Bulk
MARKING (For SOT-23 Package)
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-002,E
8550S
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-30
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
-20
-5
V
-700
mA
SOT-23
TO-92
350
1
mW
W
Collector Dissipation(Ta=25°C)
PC
Junction Temperature
Storage Temperature
TJ
+150
°C
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC =0
VCB=-30V, IE=0
VEB=-5V, IC =0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-30
-20
-5
V
V
V
-1
μA
nA
Emitter Cut-off Current
IEBO
-100
V
CE=-1V, IC=-1mA
100
120
40
hFE1
hFE2
hFE3
DC Current Gain
VCE=-1V, IC=-150 mA
400
VCE=-1V, IC=-500mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=-500mA, IB=-50mA
VBE(SAT) IC=-500mA, IB=-50mA
-0.5
-1.2
-1.0
V
V
VBE
fT
VCE=-1V, IC=-10mA
V
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
100
MHz
pF
Cob
9.0
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R206-002,E
8550S
■ TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R206-002,E
8550S
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW-R206-002,E
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