8N60L-MH-TF2-T [UTC]
Power Field-Effect Transistor,;
| 型号： | 8N60L-MH-TF2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
8N60-MH
Preliminary
Power MOSFET
8A, 600V N-CHANNEL
POWER MOSFET
1
1
TO-220F1
TO-220F
DESCRIPTION
The UTC 8N60-MH is a high voltage power MOSFET combines
advanced trench MOSFET designed to have better characteristics,
such as fast switching time, low gate charge, low on-state
resistance and high rugged avalanche characteristics. This power
MOSFET is usually used in high speed switching applications of
switching power supplies and adaptors.
1
TO-220F2
FEATURES
1
1
* RDS(ON) ≤ 1.15 Ω @ VGS=10V, ID=4.0A
* Fast switching capability
TO-251
TO-252
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
8N60L-TF1-T
Halogen Free
1
2
3
S
S
S
S
S
8N60G-TF1-T
8N60G-TF2-T
8N60G-TF3-T
8N60G-TM3-T
8N60G-TN3-R
TO-220F1
TO-220F2
TO-220F
TO-251
G
G
G
G
G
D
D
D
D
D
Tube
Tube
8N60L-TF2-T
8N60L-TF3-T
Tube
8N60L-TM3-T
Tube
8N60L-TN3-R
TO-252
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
8N60G-TF1-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F
TM3: TO-251, TN3: TO-252
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
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Copyright © 2020 Unisonic Technologies Co., Ltd
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QW-R205-649.A
8N60-MH
Preliminary
Power MOSFET
MARKING
UTC
8N60
L: Lead Free
G: Halogen Free
Lot Code
Date Code
1
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8N60-MH
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
600
±30
8
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
A
IDM
16
A
Single Pulsed (Note 3)
EAS
259
3.3
mJ
V/ns
Peak Diode Recovery dv/dt (Note 4)
TO-220F/TO-220F1
dv/dt
36
W
TO-220F2
Power Dissipation
PD
TO-251/TO-252
54
W
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 7.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 8.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220F/TO-220F1
SYMBOL
RATING
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
TO-220F2
Junction to Ambient
θJA
TO-251/TO-252
TO-220F/TO-220F1
TO-220F2
110
3.47
Junction to Case
θJC
TO-251/TO-252
2.31 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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8N60-MH
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250μA
VDS=600V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
600
2.0
V
10
μA
nA
Forward
Reverse
100
Gate- Source Leakage Current
IGSS
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
RDS(ON) VGS=10V, ID=4.0A
1.15
Ω
CISS
1020
130
18
pF
pF
pF
Output Capacitance
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate-Source Charge
QG
QGS
QGD
tD(ON)
tR
32
7
nC
nC
nC
ns
ns
ns
ns
VDS=480V, VGS=10V, ID=8A
IG=1mA (Note 1, 2)
Gate-Drain Charge
12
14
20
100
48
Turn-On Delay Time (Note 1)
Turn-On Rise Time
VDS=100V, VGS=10V, ID=8A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
Reverse Recovery Time (Note 1)
IS
ISM
VSD
trr
8
A
A
16
1.4
IS=8A , VGS=0V
IS=8A , VGS=0V
di/dt=100A/μs
V
520
12
ns
μC
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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8N60-MH
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
ISD
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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8N60-MH
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
RL
VDS
VDS
90%
VGS
RG
VDD
10%
VGS
D.U.T.
tD(ON)
tD(OFF)
Pulse Width≤ 1μs
Duty Factor≤0.1%
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
Same Type
as D.U.T.
QGS
QGD
VDS
VGS
DUT
Charge
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
D.U.T.
tp
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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8N60-MH
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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