8N80G-TA3-T [UTC]
8A, 800V N-CHANNEL POWER MOSFET; 8A ， 800V N沟道功率MOSFET
| 型号： | 8N80G-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 8A, 800V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
8N80
Power MOSFET
8A, 800V N-CHANNEL
POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 8N80 is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC 8N80 is generally applied in high efficiency switch mode
power supplies.
1
TO-220F
FEATURES
1
* Typically 35 nC Low Gate Charge
* RDS(ON) = 1.45Ω @VGS = 10V
* Typically 13 pF Low CRSS
* Improved dv/dt Capability
* Fast Switching Speed
TO-220F1
TO-220F2
1
* 100% Avalanche Tested
* RoHS–Compliant Product
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
8N80L-TA3-T
8N80L-TF1-T
8N80L-TF2-T
8N80L-TF3-T
8N80G-TA3-T
8N80G-TF1-T
8N80G-TF2-T
8N80G-TF3-T
TO-220
TO-220F1
TO-220F2
TO-220F
G
G
G
G
D
D
D
D
S
Tube
Tube
Tube
Tube
S
S
S
Note: Pin Assignment: G: GND, D: Drain, S: Source
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QW-R502-471.E
8N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
800
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Drain Current (Continuous) (TC=25°C)
Drain Current (Pulsed) (Note 1)
Avalanche Current (Note 1)
8
A
IDM
32
A
IAR
8
A
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
EAS
850
mJ
mJ
V/ns
EAR
17.8
4.5
dv/dt
TO-220
178
TO-220F1
TO-220F2
TO-220F
TO-220
59
Power Dissipation
W
62
38
PD
1.43
0.47
0.5
TO-220F1
TO-220F2
TO-220F
Linear Derating Factor above TC=25°C
W/°C
0.304
+150
-55 ~ +150
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
0.7
UNIT
°C/W
Junction to Ambient
Junction to Case
θJA
TO-220
TO-220F1
TO-220F2
TO-220F
2.1
θJC
°C/W
2.0
3.25
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
BVDSS
△BVDSS/△TJ
ID=250µA, VGS=0V
800
V
Reference to 25°C, ID=250µA
DS=800V, VGS=0V
0.5
V/°C
V
10
Drain-Source Leakage Current
IDSS
IGSS
µA
VDS=640V, TC=125°C
VGS=±30V, VDS=0V
100
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
±100 nA
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=4A
VDS=50V, ID=4A
3.0
5.0
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
1.18 1.45
5.6
CISS
COSS
CRSS
1580 2050 pF
VGS=0V, VDS=25V,
f=1.0MHz
Output Capacitance
135 175
13 17
pF
pF
Reverse Transfer Capacitance
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8N80
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
35
10
14
40
45
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=640V,
ID=8A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
90
110 230
VDD=400V, ID=8A,
RG=25Ω
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
65
70
140
150
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
8
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
32
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 1)
Reverse Recovery Charge (Note 1)
VSD
trr
IS=8A, VGS=0V
IS=8A, VGS=0V,
dIF/dt=100A/µs
1.4
V
690
8.2
ns
µC
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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8N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
(Driver
10V
)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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8N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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8N80
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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