9015G-C-T92-R [UTC]
Small Signal Bipolar Transistor, 0.1A I(C), PNP;
| 型号： | 9015G-C-T92-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), PNP |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
9015
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
* High total power dissipation. (450mW)
* Excellent hFE linearity.
* Complementary to UTC 9014
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
E
E
E
2
B
B
B
3
C
C
C
Lead Free
Halogen Free
9015L-x-T92-B
9015L-x-T92-K
9015L-x-T92-R
9015G-x-T92-B
9015G-x-T92-K
9015G-x-T92-R
TO-92
TO-92
TO-92
Tape Box
Bulk
Tape Reel
Note: Pin Assignment: E: EMITTER B: BASE C: COLLECTOR
9015L-x-T92-B
(1) B: Tape Box, T: Tape Reel, R: Tape Reel
(2) T92: TO-92
(1)Packing Type
(2)Package Type
(3)Rank
(3) x: refer to Classification of hFE
(4) G:Halogen Free, L: Lead Free
(4)Halogen Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R201-032,Ca
9015
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-45
V
-5
V
-100
mA
mW
°C
°C
Collector Dissipation
Junction Temperature
Storage Temperature
PC
450
TJ
+150
-55~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BVCBO IC = -100μA, IE = 0
BVCEO IC = -1mA, IB = 0
-50
-45
-5
V
V
BVEBO IE = -100μA, IC = 0
VCE(sat) IC = -100mA, IB = -5mA
VBE(sat) IC = -100mA, IB = -5mA
VBE(on) VCE = -5V, IC = -2mA
V
-0.2 -0.7
-0.82 -1.0
V
V
-0.6 -0.65 -0.75
-50
V
Collector Cutoff Current
ICBO
IEBO
hFE
Cob
fT
VCB = -50V, IE =0
nA
Emitter Cutoff Current
VEB = -5V, IC =0
-100 nA
200 600
4.5 7.0
100 190
DC Current Gain
VCE =-5V, IC = -1mA
VCB = -10V, IE =0, f =1MHz
VCE = -5V, IC = -10mA
60
Output Capacitance
pF
Current Gain-Bandwidth Product
MHz
V
CE = -5V, IC = -0.2mA
Noise Figure
NF
0.7 10
dB
f = 1KHz, Rs = 1KΩ
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
60-150
100-300
200-600
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R201-032,Ca
www.unisonic.com.tw
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