9N70 [UTC]
9A, 700V N-CHANNEL POWER MOSFET; 9A ， 700V N沟道功率MOSFET
| 型号： | 9N70 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 9A, 700V N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
9N70
Preliminary
Power MOSFET
9A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N70 is a high voltage and high current power MOSFET
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) =1.3Ω@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 10 pF)
* High switching Speed
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
TO-220
Packing
Tube
Halogen Free
9N70G-TA3-T
1
2
3
9N70L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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QW-R502-617.a
9N70
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
700
±30
V
Continuous TC=25°C
GS @ 10V
9
5
A
ID
V
Drain Current
TC=100°C
A
Pulsed (Note 2)
IDM
IAR
40
A
Avalanche Current
Avalanche Energy
9
A
Single Pulsed (Note 3)
Repetitive
EAS
EAR
PD
305
9
mJ
mJ
W
Power Dissipation (TC=25°C)
Linear Derating Factor
Junction Temperature
Storage Temperature
156
1.25
+150
-55~+150
W/°C
°C
°C
TJ
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3.
Starting TJ=25°C, VDD=50V, L=6.8mH, RG=25ꢀ, IAS=9A.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambien
Junction to Case
62
θJC
0.8
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9N70
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
BVDSS
ID=1mA, VGS=0V
700
V
△BVDSS/△TJ Reference to 25°C, ID=1mA
0.6
V/°C
µA
IDSS
VDS=700V, VGS=0V, TJ=25°C
VGS=+30V
10
Forward
Gate- Source Leakage Current
Reverse
+100 nA
-100 nA
IGSS
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4.5A
2
4
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
1.1 1.25
ꢀ
CISS
COSS
CRSS
2660
170
10
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
QGS
QGD
tD(ON)
tR
44
11
12
19
21
56
24
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=560V, ID=9A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 2)
Rise Time
VDD=350V, ID=9A, RG=10ꢀ,
VGS=10V, RD=38 ꢀ
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current (Note 1)
Drain-Source Diode Forward Voltage (Note 2)
IS
VD=VG=0V, VS=1.5V
9
A
A
V
ISM
VSD
40
1.5
IS=9A, VGS=0V, TJ = 25°C
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width≤300µs, duty cycle≤2%.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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